Emberion Oy

Nokia Technologies Oy

Provenance Asset Group LLC

Alexander Bessonov

Richard White

Piers Andrew

Chris Bower

Mark Allen

Darryl Cotton

Adam Robinson

Alan Colli

Yinglin Liu

David Bitauld

Michael Robert Astley

Tapani Ryhänen

Elisabetta Spigone

Troels Ronnow

Ivonne Medina-salazar

A photodetector array comprising at least one first sensor and at least one second sensor on the horizontal surface of the array substrate. The at least one first sensor is sensitive to radiation in a first wavelength range which comprises long-wavelength infrared wavelengths, and the at least one second sensor is sensitive to radiation in a second wavelength range which comprises wavelengths shorter than long-wavelength infrared. The array substrate comprises a vertical cavity on its horizontal surface, and the first sensor comprises a layer of pyroelectric material () which extends horizontally across the vertical cavity in the first area. A first part of a layer of two-dimensional layered material at least partly covers the layer of pyroelectric material (), and a second part of the layer of two-dimensional layered material at least partly covers the foundation of the second sensor.

Multispectral photodetector array

A photodetector which comprises a measurement layer () and at least a first photoactive layer () which covers the measurement layer (). The measurement layer () may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer () exhibits intrinsic semiconductivity.

P-i-n photodetector

An apparatus () comprises a light emitter () and a photodetector () formed on a single fluid-permeable substrate () such that the photodetector () is able to detect light emitted by the light emitter () after interaction of the light with a user of the apparatus (). The photodetector comprises a channel member () which may be made from graphene, respective source and drain electrodes (), a layer of photosensitive material () configured to vary the flow of electrical current through the channel member () on exposure to light from the light emitter (), and a gate electrode (). The apparatus () further comprises a layer of fluid-impermeable dielectric material () configured to inhibit a flow of electrical current between the channel member () and the gate electrode () of the photodetector () to enable the electrical conductance of the channel member () to be controlled by a voltage applied to the gate electrode () and to inhibit exposure of the light emitter () to fluid which has permeated through the fluid-permeable substrate (). The layer of fluid-impermeable dielectric material () allows resilient substrates made from polymeric material to be used without the risk of damage to the overlying components caused by the permeated fluid. The dual functionality of the layer of fluid-impermeable dielectric material () reduces the number of fabrication steps used to form the apparatus () and results in a thinner, more compact device.

Light-based sensor apparatus and associated methods

An apparatus, method and computer program wherein the apparatus comprises:a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

Apparatus, method and computer program for scrambling an identification signal using quantum dot-graphene field effect transistors

A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

Photosensitive device with electric shutter

A method comprising: providing a substrate comprising one or more electronic structures; providing a layer of perovskite overlaying the one or more electronic structures; coating a layer of photoresist material overlaying the layer of perovskite; aligning a mask with the one or more electronic structures and patterning the photoresist material; and using the same etchant to remove sections of the patterned photoresist material and the perovskite underneath the sections of the photoresist material.

Method of forming an apparatus comprising perovskite

A method and apparatus, the method comprising: forming a layer of two dimensional material (), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (), and at least two, preferably three, electrodes (); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer () overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity () between the mouldable polymer () and the layer of two dimensional material ().

Method for forming apparatus comprising two dimensional material

A photosensitive device that includes a conductive electrode, a dielectric layer, a sensing electrode composed of a two-dimensional layered material, and a photoactive layer which can be configured to absorb electromagnetic radiation. The photosensitive device also includes a single-ended measurement electrode for determining the electric potential of the sensing electrode.

Voltage-mode photosensitive device

A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The photosensitive field-effect transistor comprises a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current, and a horizontal semiconducting layer in contact with the transistor channel. The semiconducting layer comprises two or more assemblies of semiconducting material. If the two-dimensional material in the transistor channel has a high work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function. If the two-dimensional material in the transistor channel has a low work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function. The semiconducting materials may, for example, comprise semiconductor nanocrystals, quantum dots or thin-film semiconducting layers.

Photosensitive field-effect transistor

An apparatus comprises a layer of channel material, source and drain electrodes configured to enable a flow of electrical current through the channel material, and a layer of quantum dot material configured to generate electron-hole pairs on exposure to electromagnetic radiation to produce a detectable change in the electrical current indicative of one or more of the presence and magnitude of the electromagnetic radiation. The layer of quantum dot material is positioned between the channel material and a layer of conductive material. The layers of channel and conductive material have work functions such that respective built-in electric fields are created at the interfaces between the layer of quantum dot material and the channel and conductive material. The electric field at each interface acts in the same direction to promote separation of the electrons and holes of the electron-hole pairs to facilitate production of the detectable change in electrical current.

Quantum dot photodetector apparatus and associated methods

A photodetector has a two dimensional conductive channel and a quantum dot layer configured to generate charge on exposure to incident electromagnetic radiation. The surface texture of the quantum dot layer has texturing to provide surface roughness which increases the amount of electromagnetic radiation absorbed in the quantum dot layer in comparison to a photodetector having a flat (non-textured) incident electromagnetic radiation surface.

Photodetector with conductive channel made from two dimensional material

A method and apparatus, the method comprising: forming at least two electrodes () on a release layer wherein the at least two electrodes are configured to enable a layer of two dimensional material () to be provided between the at least two electrodes; providing moldable polymer () overlaying the at least two electrodes; wherein the at least two electrodes and the moldable polymer form at least part of a planar surface ().

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Cambridge, United Kingdom

Alexander Bessonov