Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Alexander Behres

Siegfried Herrmann

Adrian Stefan Avramescu

Günther Grönninger

Matthias Sabathil

Norbert Linder

Hans-Jürgen Lugauer

Britta Goeoetz

Darshan Kundaliya

Sebastian Taeger

Bruno Jentzsch

Martin Müller

Peter Stauβ

Peter Heidborn

Bernd Mayer

Christian Jung

Andreas Koller

An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Electromagnetic radiation emitting device and method of applying a converter layer to an electromagnetic radiation emitting device

A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.

Phase-coupled laser assembly and method for producing a phase-coupled laser assembly

A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Light-emitting semiconductor component and method for producing a light-emitting semiconductor component

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component

A method for supplying a process with an enriched carrier gas. A first apparatus and a second apparatus are provided. The first apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The second apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The first apparatus supplies the second apparatus with an enriched carrier gas. The second apparatus supplies the enriched carrier gas for the process. A temperature of the first apparatus is controlled as a function of a quantity of precursor in the second apparatus.

Method for supplying a process with an enriched carrier gas

A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.

Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip

A layer depositing device comprises a chamber () having a substrate carrier () for receiving at least one substrate () to be coated, and a process gas space (), comprising a partition () that separates a first segment () of the process gas space () from a second segment () of the process gas space (). The layer depositing device has a device () for moving the substrate () relative to the partition ().

Layer depositing device and method for operating it

An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.

Optoelectronic semiconductor component

An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.

LED semiconductor body

A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate () comprised of GaAs, has at least two laser stacks () which are arranged one above another and which each contain an active zone (). The active zone () is in each case arranged between waveguide layers (). The waveguide layers () each adjoin a cladding layer () at a side remote from the active zone. At least one of the waveguide layers () or cladding layers () of at least one laser stack (), comprises AlGaAs, where 0&#x2266;x&#x2266;1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer () or cladding layer () comprising the at least one additional element and the semiconductor substrate () composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

Monolithically integrated laser diode chip having a construction as a multiple beam laser diode

A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

Growing community of inventors

Pfatter, Germany

Alexander Behres