Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Alexander Baumgartner

Frank Jermann

Tim Fiedler

Stefan Lange

Daniel Bichler

Hailing Cui

Rebecca Römer

Barbara Huckenbeck

Vera Stöppelkamp

Frauke Thienel

Norbert Bönisch

Tony Albrecht

Ion Stoll

Markus Richter

Hans-Christoph Gallmeier

Martin Brandl

Rainer Butendeich

Alexander Wilm

Kathy Schmidtke

Tomin Liu

T'ing Qi'ao Leow

Rebecca Romer

Norbert Bonisch

Vera Stoppelkamp

Rebecca RÖMER

In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Radiation emitting device and method of manufacturing a radiation emitting device

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSiAlN, SrSiAlON, BaSiNO, ALiXO, M*Z*[A*B*C*D*E*NO], and combinations thereof.

Radiation-emitting optoelectronic component

The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Optoelectronic device, conversion element, method of producing a plurality of conversion elements and method of producing an optoelectronic device

A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes Sr(SrCa)SiAlN:Eu, wherein x is 0.8&#x3c;x&#x2264;1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein the parameter value a is between 0.6 and 1.0 inclusive, wherein the phosphor has a structure comprising (Si/Al)Ntetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.

Phosphor, method for producing a phosphor and use of a phosphor

An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

Optoelectronic component

A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SrM)SiAl(N,X):D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element A1, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, A1 includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlN.

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SrCa)SiAlN.

Lighting device comprising a primary radiation source and a first phosphor

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:

Method for producing a plurality of radiation-emitting semiconductor chips

The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

Growing community of inventors

Donaustauf, Germany

Alexander Baumgartner