University of Southern California

Alexander Badmaev

Chongwu Zhou

Chuan Wang

Koungmin Ryu

Yuchi Che

RF transistors are fabricated at complete wafer scale using a nanotube deposition technique capable of forming high-density, uniform semiconducting nanotube thin films at complete wafer scale, and electrical characterization reveals that such devices exhibit gigahertz operation, linearity, and large transconductance and current drive.

Radio frequency devices based on carbon nanomaterials

Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.

Integrated circuits based on aligned nanotubes

A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area.

Growing community of inventors

Hillsboro, OR, United States of America

Alexander Badmaev