Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Alexander Bachmann

Christian Lauer

Harald König

Sebastian Taeger

Roland Heinrich Enzmann

Uwe Strauβ

Michael Müller

Volker Grossmann

Michael Furitsch

The invention relates to a semiconductor laser diode () comprising: &#x2014;a semiconductor layer sequence () having an active region () provided for generating radiation; &#x2014;a radiation decoupling surface () which extends perpendicular to a main extension plane of the active region; &#x2014;a main surface () which delimits the semiconductor layer sequence in the vertical direction; &#x2014;a contact layer () which adjoins the main surface; and &#x2014;a heat-dissipating layer (), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Semiconductor laser diode and semiconductor component

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2&#xd7;10and by at most 5&#xd7;10.

Edge-emitting semiconductor laser and method for operating a semiconductor laser

A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

Laserdiode

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Semiconductor laser diode

A semiconductor laser diode is specified, comprising a semiconductor layer sequence () with semiconductor layers applied vertically one above another with an active layer (), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (), and a heat barrier layer () and a metallic contact layer () laterally adjacent to one another on a main surface () of the semiconductor layer sequence (), wherein the heat barrier layer () is formed by an electrically insulating porous material (). As a result, the heat arising during operation is conducted via the p-type electrode () to a heat sink () and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.

Semiconductor laser diode, method for producing a semiconductor laser diode and semiconductor laser diode arrangement

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2&#xd7;10and by at most 5&#xd7;10.

A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 &#x3bc;m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

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Ismaning, Germany

Alexander Bachmann