Wolfspeed, Inc.

Siemens Energy, Inc.

Cree Fayetteville, Inc.

Arkansas Power Electronics International, Inc.

Rohm Co., Ltd.

Alexander B Lostetter

Brice McPherson

Ramesh Subramanian

Anand A Kulkarni

David J Mitchell

John Fraley

Roberto Marcelo Schupbach

Edward R Roesch

Rod Waits

Daniel John Martin

Bryon Western

Ty McNutt

Matthew Feurtado

Brandon Passmore

Zachary Cole

Jennifer Stabach

Sayan Seal

Takukazu Otsuka

Zach Cole

Jared Hornberger

Adam Barkley

Bret Whitaker

Roberto Schupbach

John R Fraley

The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.

High power multilayer module having low inductance and fast switching for paralleling power devices

Power module

A power module including at least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, a plurality of power devices arranged on and connected to the at least one power substrate, and the third terminal being electrically connected to at least one of the plurality of power devices. The power module further including a base plate and a plurality of pin fins arranged on the base plate and the plurality of pin fins configured to provide direct cooling for the power module.

Housing for a power module assembly

A power module includes a case, a first terminal, a second terminal, and a number of silicon carbide semiconductor die. The case has a footprint less than 30 cm. The silicon carbide semiconductor die are inside the case and coupled between the first terminal and the second terminal. The power module and the silicon carbide semiconductor die are configured such that in a first operating state the silicon carbide semiconductor die are capable of continuously blocking voltages greater than 650V between the first terminal and the second terminal, and in a second operating state the silicon carbide semiconductor die are capable of continuously passing currents greater than 200 A between the first terminal and the second terminal.

Silicon carbide power module

Growing community of inventors

Fayetville, AR, United States of America

Alexander B Lostetter