Cornell University

Alexander Austin Chaney

Debdeep Jena

Huili Grace Xing

Kazuki Nomoto

Shyam Bharadwaj

Henryk Turski

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

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Ithaca, NY, United States of America

Alexander Austin Chaney