Intermolecular, Inc.

Symyx Technologies, Inc.

Honda Giken Kogyo Kabushiki Kaisha

Calera Corporation

Symyx Solutions, Inc.

Other

Apple Inc.

Eveready Battery Company, Inc.

Celera Corporation

Freeslate, Inc.

Honda Giken Kogyo Kabushiki Kaisha, Kabushiki Kaisha Honda

Alexander A Gorer

Tony P Chiang

Thomas R Boussie

David E Lazovsky

Martin Devenney

Konstantinos Chondroudis

Daniel Mark Giaquinta

Hiroyuki Oyanagi

Peter Strasser

Kenta Urata

Qun Fan

Ryan J Gilliam

Ting He

Bryan Boggs

Hiroichi Fukuda

Keith James Cendak

Margarete K Leclerc

Michael Joseph Weiss

Kyle Self

Thomas A Albrecht

Michael Kostowskyj

Prashant B Phatak

Igor C Ivanov

Kazuhiko Iwasaki

Chi-I Lang

Dennis Solas

Samaresh Mohanta

Kasra Farsad

Steven Kaye

Valentin Decker

William A Braff

John Hunter Miller

Nigel Antony Knott

Nikhil Jalani

Cory R O'Neill

Zhi-Wen Sun

Leonid Matsiev

Anh Duong

Zachary M Fresco

Nikhil D Kalyankar

Youqi Wang

Frank H Feddrix

Nicole Rutherford

Scott W Donne

Jennifer N Cendak, Legal Representative

Sum Nguyen

Thomas H McWaid

Dennis W Solas

Keith James c/o Symyx Technologies Inc Cendak

Energy storage devices, battery cells, and rechargeable batteries of the present technology may include an anode and a cathode. The battery cells may include a separator positioned between the anode and the cathode. The battery cells may include an electrolyte incorporated with the anode and the cathode. The battery cells may also include a pseudo-reference electrode at least partially in contact with the electrolyte. The pseudo-reference electrode may be positioned between layers of the separator.

Rechargeable battery with pseudo-reference electrode

Energy storage devices, battery cells, and rechargeable batteries of the present technology may include an anode and a cathode. The battery cells may include a separator positioned between the anode and the cathode. The battery cells may include an electrolyte incorporated with the anode and the cathode. The battery cells may also include a pseudo-reference electrode at least partially in contact with the electrolyte. The pseudo-reference electrode may be electrically isolated from the anode and the cathode.

There are provided methods and systems for an electrochemical cell including an anode and a cathode where the anode is contacted with a metal ion that converts the metal ion from a lower oxidation state to a higher oxidation state. The metal ion in the higher oxidation state is reacted with hydrogen gas, an unsaturated hydrocarbon, and/or a saturated hydrocarbon to form products.

Systems and methods for preparation and separation of products

Electrochemical hydroxide systems and methods using metal oxidation

Electrochemical systems and methods using metal and ligand

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

Methods for discretized processing and process sequence integration of regions of a substrate

A low-voltage, low-energy electrochemical system and method of removing protons and/or producing a base solution comprising hydroxide and carbonate/bicarbonate ions, utilizing carbon dioxide in a cathode compartment that is partitioned into a first cathode electrolyte compartment and a second cathode electrolyte compartment such that liquid flow between the cathode electrolyte compartments is possible, but wherein gaseous communication between the cathode electrolyte compartments is restricted. Carbon dioxide gas in one cathode electrolyte compartment is utilized with the cathode electrolyte in both compartments to produce the base solution with less that 3V applied across the electrodes.

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Methods for discretized formation of masking and capping layers on a substrate

Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

Non-volatile resistive switching memories formed using anodization

Systems for discretized processing of regions of a substrate

Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

Combinatorial electrochemical deposition

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Los Gatos, CA, United States of America

Alexander A Gorer