University of California

Uchicago Argonne, LLC

Alexander A Balandin

Anirudha V Sumant

Christopher S Johnson

Tijana Rajh

Eungje Lee

Alexander Khitun

Elena Shevchenko

Bonil Koo

Roger Lake

Sakhrat Khizroev

Rabee Ikkawi

Nissim Amos

Roman Chomko

Vladimir A Fonoberov

Fariborz Kargar

An electromagnetic interface (EMI) shielding material and method for producing the electromagnetic interface (EMI) shielding material. The EMI shielding material including a polymer matrix and a van der Waals material embedded in the polymer matrix and forming quasi-one-dimensional atomic threads, and wherein the van der Waals material is a trichalcogenide compound.

Electromagnetic and thermal shields with low-dimensional materials

A composite thermal interface material and methods are shown. Devices such as lithium ion batteries incorporating composite thermal interface materials show significant improvement in cooling performance. In one example, composite thermal interface materials shown provide cooling through both a phase change mechanism, and a heat conducting mechanism which directs heat away from the device to be cooled, such as electrochemical cells in a battery, to an external housing and/or a coupled heat exchange device such as radiating fins.

Thermal interface composite material and method

A thermally conductive electrochemical cell comprises a lithium ion-containing liquid electrolyte contacting a cathode and anode. The cathode and anode are in the form of electroactive sheets separated from each other by a membrane that is permeable to the electrolyte. One or more of the cathode and anode comprises two or more layers of carbon nanotubes, one of which layers includes electrochemically active nanoparticles and/or microparticles disposed therein or deposited on the nanotubes thereof. The majority of the carbon nanotubes in each of the layers are oriented generally parallel to the layers. Optionally, one or more of the layers includes an additional carbon material such as graphene, nanoparticulate diamond, microparticulate diamond, and a combination thereof.

Thermally conductive lithium ion electrodes and batteries

Thermal interface materials and methods of manufacturing the same are disclosed. The thermal interface material can include a matrix and a filler. The filler can include graphene and multilayer graphene disposed within the matrix. Alternatively, the thermal interface material can also include a matrix, a metallic filler, and a graphene filler.

Graphene based thermal interface materials and methods of manufacturing the same

A graphene sensor and method for selective sensing of vapors, gases and biological agents are disclosed. The graphene sensor can include a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; and a source and drain contact on an upper surface of the layer of graphene. The method for detection of vapors, gases and biological objects with low frequency input as a sensing parameter can include exposing a graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising: a substrate; a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene; and measuring a change in a noise spectra of the graphene device.

Graphene-based gas and bio sensor with high sensitivity and selectivity

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Graphene layer formation on a carbon based substrate

A dual-gate transistor having a negative differential resistance (NDR) region is disclosed. The dual-gate transistor includes a back-gate, a zero-bandgap graphene layer disposed on the back-gate, a top-gate disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate, and a drain disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate and displaced from the source. Also included is a dynamic bias controller configured to simultaneously sweep a source-drain voltage and a top-gate voltage across a Dirac point to provide operation within the NDR region. Operation within the NDR region is employed to realize non-Boolean logic functions. Graphene-based non-Boolean logic circuits are constructed from pluralities of the disclosed dual-gate transistor. Pattern recognition circuitry for operation between 100 GHz and 500 GHz is also disclosed via the graphene-based non-Boolean logic circuits.

Graphene-based non-boolean logic circuits

High density-information storage is accomplished by the use of novel, near-field optical devices in combination with high-density storage media. The near-field optical devices are configured to focus light to nanoscale spot sizes and may employ negative index of refraction materials for focusing. The high-density storage media may include protein-based storage media, such as photochromic proteins, and high-coercivity magnetic storage media. Light energy provided the optical devices may enable exposed protein molecules to transition between stable molecular states that may be distinguished on the basis of their respective spectral maxima. Light energy provided by the optical device may also be used to heat localized regions of magnetic media to a selected temperature, effecting local changes in coercivity of the magnetic media. Information may be written to the magnetic storage media within this localized region using a magnetic recording device, while leaving the magnetic state of the remaining portion of the magnetic storage media unchanged.

Near field optical recording system having negative index of refraction structure

The present invention provides a nanometer-scale transistor architecture providing enhanced carrier mobility. In particular, a portion of a channel of a transistor is substantially surrounded with an acoustically hard material to form a barrier shell about the channel. The barrier shell functions to confine phonons in the channel. Confining the phonons in the channel reduces the extent to which atoms in the crystal lattice structure of the channel move as they vibrate. Restricting the extent that the atoms vibrate in the crystal lattice of the channel significantly reduces the scattering of electrons or holes traveling through the channel. In one embodiment of the invention, the thickness of the channel is in the order of the thermal phonon wavelength of the material forming the channel, and the barrier shell is acoustically harder than the channel. The benefits of the present invention may be provided without requiring strain engineering.

Growing community of inventors

Riverside, CA, United States of America

Alexander A Balandin