Sharp Kabushiki Kaisha Corporation

Sharp Display Technology Corporation

Alex Yudin

Yoshihiko Tani

Valerie Berryman-Bousquet

Shigetoshi Ito

Andrew Kay

Yoshimi Tanimoto

Shinichi Miyazaki

A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Light emitting element

A touch panel display includes a display panel having a plurality of pixel regions that emit light, and a touch sensor having an electrode configuration that overlays the display panel. The electrode configuration includes a first electrode and a second electrode that are separated by an insulating region. The electrode separation distance between the first and second electrodes is in a range whereby (1) with increasing electrode separation distance a first rate of proportional decrease in mutual capacitance between the first and second electrodes is greater than a second rate of proportional decrease in signal magnitude of an output signal, and (2) a ratio (R) of the first rate to the second rate satisfies the relationship 1.0&#x3c;R&#x3c;2.5. With such parameters, the electrode separation distance may be from 30 &#x3bc;m to 50 &#x3bc;m, and/or from 0.5 to 0.75 times a pixel pitch of the pixel regions.

Touch panel sensor with optimal electrode separation for improved performance

A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Semiconductor laser diode with low threshold current

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Oxford, United Kingdom

Alex Yudin