Chingis Technology Corporation

Alex Wang

Hsien-Wen Liu

Tzeng-Huei Shiau

Shang-De Chang

I-Sheng Liu

Han-Chih Lin

A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.

Growing community of inventors

Cupertino, CA, United States of America

Alex Wang