Applied Materials, Inc.

Digital Dynamics, Inc.

Alex Minkovich

Joseph Yudovsky

Kevin Griffin

Dmitry A Dzilno

Abraham Ravid

Michael Robert Rice

Nir Merry

Kaushal Gangakhedkar

Jeffrey C Hudgens

Todd J Egan

Vikas Vinayak

Leon Volfovski

John William Lane

Mariusch Gregor

Mayur G Kulkarni

Somesh Khandelwal

Keith Brian Porthouse

Hongbin Li

Richard Casler

Brendan Till

A radio frequency measurement system comprises an analog-to-digital converter, a voltage-controlled oscillator, and a phase lock loop circuit. The analog-to-digital converter includes a first input to receive a radio frequency signal and includes a first output to provide a digital signal in response to the received radio frequency signal. The voltage-controlled oscillator includes a first input and includes a first output couped to the first input of the analog-to-digital converter to provide a sampling clock to the analog-to-digital converter. The phase lock loop circuit includes a first input to receive a distributed clock signal, includes a second input coupled to the first output of the voltage-controlled oscillator to receive the sampling clock, and includes an output coupled to the first input of the voltage-controlled oscillator to provide a phase locked signal to the voltage-controlled oscillator in response to the distributed clock signal and the sampling clock.

Synchronization of RF measurements in networked systems

Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Position and temperature monitoring of ALD platen susceptor

Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

Wafer placement and gap control optimization through in situ feedback

Embodiments of substrate supports with a heater are provided herein. In some embodiments, a substrate support may include a first member to distribute heat to a substrate when present above a first planar surface of the first member, a second member disposed beneath the first member, the second member including a plurality of resistive heating elements, wherein the plurality of resistive heating elements provide local temperature compensation to the first member to heat the substrate when present, a third member disposed beneath the second member, the third member including one or more base heating zones to provide a base temperature profile to the first member, and a fourth member disposed beneath the third member, the fourth member including a first set of electrical conductors coupled to each of the resistive heating elements.

Substrate support with switchable multizone heater

Embodiments disclose a vibration-controlled robot apparatus. The apparatus includes a robot having an end effector operable to transport a substrate, a sensor coupled to the robot, the sensor operable to sense vibration as the robot transports the substrate, and operating the robot to reduce vibration of the end effector supporting the substrate. In some embodiments, a filter is provided in the motor drive circuit to filter one or more frequencies causing unwanted vibration of the end effector. Vibration control systems and methods of operating the same are provided, as are other aspects.

Vibration-controlled substrate handling robots, systems, and methods

Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Methods and apparatus for processing substrates using model-based control

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Campbell, CA, United States of America

Alex Minkovich