Cree Fayetteville, Inc.

Arkansas Power Electronics International, Inc.

Wolfspeed, Inc.

Alex Lostetter

Brice McPherson

Jared Hornberger

Robert Shaw

Brandon Passmore

Brad Reese

Peter Killeen

Tony M Berry

Roberto Marcelo Schupbach

Marcelo Schupbach

Ty McNutt

Edgar Cilio

Jack Bourne

Eric Cole

Leonard Schaper

Sharmila Mounce

Tony Berry

The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.

High power multilayer module having low inductance and fast switching for paralleling power devices

A method of making a power module includes providing a base plate defining a topology pattern, providing a power substrate above the base plate, providing at least two power contacts and arranging solder catches in the at least two power contacts, soldering the at least two power contacts to the power substrate utilizing the solder catches, and securing a housing to the power substrate.

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.

A four quadrant power module with lower substrate parallel power paths and upper substrate equidistant clock tree timing utilizing parallel leg construction in a captive fastener power module housing.

High temperature equalized electrical parasitic power packaging method for many paralleled semiconductor power devices

High temperature gate driving circuits with improved noise resistance and minimized loss are implemented with high temperature components with a reduced size magnetic isolation transformer. Input broad-pulse width modulated signals are converted to offsetting narrow pulses to cross the reduced size magnetic transformer minimizing isolation losses. One embodiment teaches time and voltage offset narrow single pulses that control a set and reset regeneration of the pulse width output on the secondary side of the transformer. Another embodiment teaches multiple concurrent voltage offset pulses to cross the transformer and charge a threshold capacitor for both filtering noise and controlling the pulse width regeneration on the secondary side of the transformer.

Low-loss noise-resistant high-temperature gate driver circuits

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Fayetteville, AR, United States of America

Alex Lostetter