Taiwan Semiconductor Manufacturing Comp. Ltd.

Alex Hsu

Ching-Chun Wang

Tzu-Hsuan Hsu

Chia-Shiung Tsai

Feng-Jia Shiu

Jen-Cheng Liu

Chung-Yi Yu

Shou-Gwo Wuu

Chien-Hsien Tseng

Shih-Chi Fu

Martin Liu

Chin-Hong Cheng

The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.

Method for reducing crosstalk in image sensors using implant technology

Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Method to optimize substrate thickness for image sensor device

Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.

Method of measurement in semiconductor fabrication

Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate.

Method of wafer bonding

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Hsinchu, Taiwan

Alex Hsu