Technion Research & Development Foundation Limited

Alex Hayat

Meir Orenstein

Amir Nevet

Alex Lahav

Pavel Ginzburg

A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.

Light source based on simultaneous two-photon emission

A system for measuring one or more characteristics of light of a photon energy Efrom a light source, that can be determined from measuring three-photon absorption events, the system comprising:

System and method for analyzing light by three-photon counting

The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.

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Carmiel, Israel

Alex Hayat