Applied Materials Israel Limited

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Alex Goldenshtein

Alon Litman

Nir Ben-David Dodzin

Albert Karabekov

Stefan Lanio

Emanuel Elyasaf

John Breuer

Dominik Patrick Ehberger

Dan Tuvia Fuchs

A method for evaluating an impedance related value of a structure of a sample, the method includes: (i) performing a first illumination iteration that includes charging the structure with an illumination iteration charge; (ii) performing a second illumination iteration that includes imaging the structure to provide an image of the structure; a value of the illumination iteration charge and a value of a time difference between step (i) and step (ii) are determined to introduce a dependency between an impedance of the structure and the image of the structure; wherein steps (i) and (ii) are executed using an electron beam, and (iii) determining the impedance related value of the structure based on the image of the structure. There may be three or more values of the impedance related value.

Electrical impedance measurement using an electron beam

A charged particle beam apparatus with a charged particle source to generate a primary charged particle beam, a sample holder to hold a sample for impingement of the primary charged particle beam on the sample, a pulsed laser configured to generate a pulsed light beam for impingement onto an area on the sample, and an electrode to collect electrons emitted from the sample in a non-linear photoemission.

Charged particle beam apparatus and method of controlling sample charge

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

On-axis illumination and alignment for charge control during charged particle beam inspection

A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Inspection of a lithographic mask that is protected by a pellicle

A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

System for discharging an area that is scanned by an electron beam

A method for inspecting a reticle, that includes the following stages: providing a reticle designed to be exposed by light of a first wavelength during a photolithography process; defining optical characteristics of an inspection system, whereas the optical characteristics include a second wavelength that differs from the first wavelength; and configuring an inspection system in response to the defined optical characteristics. An inspection system that includes: an illumination path adapted to direct light of a second wavelength towards a reticle designed to be exposed by light of a first wavelength during a photolithography process; a collection path adapted to collect light transmitted through the reticle; whereas at least one of the illumination path and collection path is configurable such that the inspection system emulates the photolithographic process while utilizing light of the second wavelength.

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Nes Ziona, Israel

Alex Goldenshtein