Seagate Technology Incorporated

Micron Technology Incorporated

Avago Technologies General IP (singapore) Pte. Ltd.

Alex G Tang

Leonid Baryudin

Earl T Cohen

Timothy Lawrence Canepa

Fangfang Zhu

Ning Chen

Erich Franz Haratsch

Jiangli Zhu

Ying Yu Tai

Stephen D Hanna

Zhengang Chen

Mark Ish

Abdelhakim Alhussien

Sundararajan Sankaranarayanan

Jackson L Ellis

Paul Roger Stonelake

Hongmei Xie

Abdel Hakim Alhussien

Ramdas P Kachare

Carl E Forhan

Michael Scott Hicken

Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.

Limiting hot-cold swap wear leveling

In an embodiment, a system includes a plurality of memory components that each include a plurality of management groups. Each management group includes a plurality of sub-groups. The system also includes a processing device that is operatively coupled with the plurality of memory components to perform wear-leveling operations that include maintaining a sub-group-level delta write count (DWC) for each of the sub-groups of each of the management groups of a memory component in the plurality of memory components. The wear-leveling operations also include determining, in connection with a write operation to a first sub-group of a first management group of the memory component, that a sub-group-level DWC for the first sub-group equals a management-group-move threshold, and responsively triggering a management-group-move operation from the first management group to a second management group of the memory component.

Wear leveling based on sub-group write counts in a memory sub-system

Devices, methods, and media are described for unmap support in coarse mapped storage. In one embodiment a controller of a memory sub-system manages a set of metadata for super management units (SMU) of the memory sub-system, wherein each SMU of the memory sub-system comprises a plurality of data management units (MU), and wherein each MU comprises a plurality of addressable memory elements as part of a coarse memory storage of the memory sub-system. The controller processes a trim command for a first SMU of the plurality of SMUs, and adjusts a trim bit associated with metadata for the first SMU. This trim bit can then be used to manage read and write operations as the trimmed unit waits to be written with an unmap data pattern. Similarly, a trim bit in MU metadata can be used manage related operations to prevent memory access errors.

Unmap data pattern for coarse mapping memory sub-system

A device may include a SSD having multiple storage units and a deduplication control circuit configured to determine whether selected data content to be stored is a duplicate of previous data content already in a first buffer of data buffered to be stored in a set of storage units. The deduplication circuit may be further configured to, based on a determination that the selected data content is a duplicate of first previous data content already buffered in the first buffer, instead of buffering another copy of the selected data content, buffer a first header including a first pointer that associates the first header with the first previous data content already buffered in the first buffer. The deduplication circuit may also be configured to reorder the first buffer such that individual data contents in the first buffer are grouped near headers associated with the individual data contents.

Reordered data deduplication in storage devices

The implementations described herein provide a hybrid drive with a storage capacity including solid-state drive (NAND) technology and hard disc drive (HDD) technology. A translation layer is stored in the solid-state drive and includes plurality of entries. Each entry of the plurality of entries corresponds to at least one logical data unit and includes a cache state indicating where the data corresponding to the logical data unit is located and whether the data is valid. The translation layer may be a multi-layer map that includes a sparse mapping scheme. In a sparse multi-layer map, entries are leaf entries or non-leaf entries. Leaf entries include a cache state for the corresponding logical data unit(s). Non-leaf entries may include a pointer to a lower level mapping for a plurality of logical data units.

Hybrid drive translation layer

A garbage collection method comprises selecting one or blocks in a SSD of a hybrid drive for garbage collection; determining a state of data of the one or more selected blocks, wherein the state suggests a location and temperature of data; and executing a garbage collection efficiency and caching efficiency action on the data of the one or more selected blocks based on the determined state. The garbage collection process may utilize the state information provided by the cache layer of the hybrid drive to make decisions regarding data in the one or more selected blocks.

Hybrid drive garbage collection

Reordered local data deduplication in storage devices

Apparatus and method for managing data in a hybrid data storage device. The device has a first non-volatile memory (NVM) of solid state memory cells arranged into a first set of garbage collection units (GCUs), and a second NVM as a rotatable data recording medium arranged into a second set of GCUs each comprising a plurality of shingled magnetic recording tracks. A control circuit combines a first group of logical block units (LBUs) stored in the first set of GCUs with a second group of LBUs stored in the second set of GCUs to form a combined group of LBUs arranged in sequential order by logical address. The control circuit streams the combined group of LBUs to a zone of shingled magnetic recording tracks in a selected one of the second set of GCUs. A combined media translation map identifies physical addresses in both the first and second NVMs.

Managing shingled magnetic recording (SMR) zones in a hybrid storage device

An apparatus includes a memory and a controller. The memory may be configured to store data. The controller may be configured to process a plurality of input/output requests to read/write to/from the memory. The controller generally includes a processor, a cache and a hardware assist circuit. The processor may be configured to initiate a recycle operation by generation of a start index. The cache may be configured to buffer a first level of a map and less than all of a second level of the map. The hardware assist circuit may be configured to search through the first level or any portions of the second level of the map in the cache in response to the start index, and notify the processor in response to the search detecting one or more blocks in the memory that contain valid data to be recycled.

Map recycling acceleration

Systems and methods presented herein provide for open block handling of an SSD. In one embodiment, an SSD includes a buffer, and an MLC flash device. The SSD also includes a controller operable to write data in the buffer based on an Input/Output (I/O) request (e.g., from a host), to begin copying the data from the buffer to a block of the MLC flash device, to copy a portion of the data associated with open word lines of the block to another location in the buffer after a power cycle, and to update a lookup table for the copied portion of the data with the other location so that the copied portion of the data can be accessed via a subsequent I/O request.

Open block handling to reduce write errors

A method for recovery after a power failure. The method generally includes a step of searching at least some of a plurality of pages of a memory to find a first erased page in response to an unsafe power down. A step may move stored data located between a particular word line in the memory that contains the first erased page and a previous word line that is at least two word lines before the particular word line. Another step may write new data starting in a subsequent word line that is the at least two word lines after the particular word line that contains the first erased page.

Growing community of inventors

Oakland, CA, United States of America

Alex G Tang