Abb Research Ltd.

Okmetic Ltd.

Alex Ellison

Erik Janzen

Olle Kordina

Marko Tuominen

Chun-Yuan Gu

A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.

Growing community of inventors

Linkoping, Sweden

Alex Ellison