Globalwafers Co., Ltd.

Sunedison Semiconductor Limited (uen201334164h)

Alex Chu

Sumeet S Bhagavat

Alexis Grabbe

Hui Wang

Ichiro Yoshimura

H J Chiu

Roland R Vandamme

Peter D Albrecht

TaeHyeong Kim

Yunbiao Xin

Masaru Kitazawa

Hsin-Yi Chi

Francis Hung

Jones Yang

J W Lu

Norimasa Katakura

A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.

Methods for processing semiconductor wafers having a polycrystalline finish

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

Methods for polishing semiconductor substrates that adjust for pad-to-pad variance

Methods for polishing semiconductor substrates are disclosed. The finish polishing sequence is adjusted based on a measured edge roll-off of an analyzed substrate.

Semiconductor substrate polishing methods with dynamic control

A polishing head assembly for single side polishing of silicon wafers is provided. The polishing head assembly includes a polishing head and a cap. The polishing head has a recess along a bottom portion, the recess having a recessed surface. The cap is positioned within the recess, and has an annular wall and a floor extending across the annular wall. The floor is spaced from the recessed surface to form a chamber therebetween. The chamber is configured to be pressurized for deflecting the floor. The annular wall is attached to the polishing head with an adhesive.

Center flex single side polishing head having recess and cap

Growing community of inventors

Hsinchu, Taiwan

Alex Chu