Binoptics Corporation

Macom Technology Solutions Holdings, Inc.

Alex A Behfar

Cristian Stagarescu

Alfred T Schremer, Jr

Malcolm R Green

Alfred T Schremer

Norman Sze-keung Kwong

Wilfried Lenth

Vainateya

Kiyofumi Muro

Norman Kwong

Joseph John Vandenberg

Cristian Stagaresen

Norman Sze-Keung Kwong

Norman S Kwong

Cristian B Stagarescu

Nln Vainateya

Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

High reliability etched-facet photonic devices

Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

High SMSR unidirectional etched lasers and low back-reflection photonic device

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Edge-emitting etched-facet lasers

A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.

Lasers with beam-shape modification

A reflective surface is disclosed in conjunction with a semiconductor laser to shape a laser beam and modify a direction of the laser beam. The reflective surface may be formed on a structure disposed adjacent to a laser structure to allow high coupling of laser light to, for example, a silicon photonics chip or an optical fiber.

Lasers with beam shape and beam direction modification

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Unidirectionality of lasers is enhanced by forming one or more etched gaps () in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg () of a V-shaped laser (). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

Growing community of inventors

Ithaca, NY, United States of America

Alex A Behfar