Infineon Technologies Dresden Gmbh

Infineon Technologies Ag

Other

Alessia Scire

Thoralf Kautzsch

Steffen Bieselt

Heiko Froehlich

Mirko Vogt

Maik Stegemann

Hans-Joachim Schulze

Franz Hirler

Anton Mauder

Francisco Javier Santos Rodriguez

Uwe Rudolph

Wolfgang Scholz

Bernhard Winkler

Andre Roeth

Dieter Kaiser

Tarja Hauck

Frank Zschorlich

Alfons Dehe

Boris Binder

Mohsin Nawaz

Marco Mueller

A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.

Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures

A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.

Microelectromechanical device and method for forming a microelectromechanical device having a support structure holding a lamella structure

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Integrated semiconductor device and manufacturing method

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.

Silicon on nothing devices and methods of formation thereof

According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.

Method for manufacturing an electronic device and method for operating an electronic device

According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.

System and method for a comb-drive MEMS device

According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.

Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier

Electronic device, a method for manufacturing an electronic device, and a method for operating an electronic device

According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.

Wafer, a method for processing a wafer, and a method for processing a carrier

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Dresden, Germany

Alessia Scire