Micron Technology Incorporated

Other

Stmicroelectronics S.r.l.

Alessandro Magnavacca

Jianmin Huang

Xiangang Luo

Scott Anthony Stoller

Mauro Luigi Sali

Andrea Pozzato

Patroclo Fumagalli

Antonino Pollio

Carlo Lisi

Giuseppe Vito Portacci

Andrea Bellini

Nicola Del Gatto

Marco Defendi

Marco Ferrario

Massimiliano Mollichelli

Massimiliano Scotti

Claudio Nava

Francesco Mastroiani

Francesco Pipitone

Antonio Geraci

A memory device may include a plurality of non-volatile memory devices and a controller. The controller may be configured to generate first parity data for a portion of a data block stored in a plurality of memory blocks of the plurality of non-volatile memory devices, store the first parity data in a swap block that includes one or more non-volatile memory devices of the plurality of non-volatile memory devices, generate second parity data for the data block, store the second parity data in the swap block, perform a partial read back of the data block, store, after performing the partial read back, the second parity data in a subset of the plurality of memory blocks, and release the first parity data from the swap block after storing the second parity data in the subset of the plurality of memory blocks.

Data storage with parity and partial read back in a redundant array

Systems and methods are disclosed, including determining whether to write dummy data to a first physical page of memory cells of a storage system, such as in response to a detected asynchronous power loss (APL) at the storage system, using a determined number of ones stored in the first physical page.

Recovery of memory from asynchronous power loss

Methods, systems, and devices for initialization techniques for memory devices are described. A memory system may include a memory array on a first die and a controller on a second die, where the second die is coupled with the first die. The controller may perform an initialization procedure based on operating instructions stored within the memory system. For example, the controller may read a first set of operating instructions from read-only memory on the second die. The controller may obtain a second set of operating instructions stored at a memory block of the memory array on the first die, with the memory block indicated by the first set of operating instructions. The controller may complete or at least further the initialization procedure based on the second set of operating instructions.

Initialization techniques for memory devices

Systems and methods are disclosed, including determining whether to write dummy data to a first physical page of memory cells of a storage system, such as in response to a detected asynchronous power loss (APL) at the storage system, using a determined number of zeros in the first physical page.

A memory has an array of k-level cells, organized into pages of words, each storing a string of bits. The memory device includes a coding circuit input with strings of N bits, and generates corresponding k-level strings. A program circuit is input with the k-level strings to stores in groups of c cells with k levels. A read circuit reads data stored in groups of c cells with k levels and generates k-level strings. A read decoding circuit is input with k-level strings read from groups of c cells with k levels to generate strings of N bits. The words of each page are grouped in groups of words, each word including groups of c cells with k levels, and at least one remaining bit of the word being stored, with corresponding remaining bits of other words of the page, in a group of c cells with k levels.

Method of managing a multilevel memory device and related device

A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.

Memory device employing three-level cells and related methods of managing

The memory device includes a plurality of memory chips of a certain capacity assembled in a single package and sharing input/output pins, the memories being selectable and singularly enabled one at the time by appropriate external commands coherently with the currently addressed memory location. The device uses only one external enable/disable logic command applied through a single dedicated pin. Each of the memory chips has a number of additional input/output pads equal to 2*n, where 2is the number of memory chips contained in the device, and a dedicated circuit that generates an internal enable/disable command, as a function of logic inputs corresponding to the logic states of the additional pads and the external enable/disable command.

Memory device composed of a plurality of memory chips in a single package

A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.

Growing community of inventors

Sesto San Giovanni, Italy

Alessandro Magnavacca