Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Weebit Nano Ltd.

Alessandro Bricalli

Gabriel Molas

Amir Regev

Guiseppe Piccolboni

Jean-François Nodin

Thomas Magis

Yifat Cohen

An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.

Low forming voltage OxRAM memory cell, and associated method of manufacture

A method for resetting an array of RAM cells by applying a sequence of N reset operations, the method including at a first reset operation, defining a first reset technique and performing the first reset operation; at a j-th reset operation of a N−1 subsequent reset operations, j being an integer between 2 and N, if a correction yield of the reset technique used at the (j−1)-th reset operation fulfils a predefined condition, applying the reset technique used at the (j−1)-th reset operation to perform the j-th reset operation, if the correction yield does not fulfil the predefined condition, defining a new reset technique and applying the new reset technique to perform the j-th reset operation, the correction yield being a cumulative correction yield or a relative correction yield, the correction yield for the N reset operations being measured prior to the first reset operation.

Method for resetting an array of resistive memory cells

A method for programming at least one resistive memory cell of an array of resistive memory cells, includes a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle including a set procedure and a reset procedure, each set procedure including the application of a set technique chosen among a plurality of set techniques, the method including acquiring a bit error ratio value corresponding to each programming cycle for each set technique; and at each programming cycle, applying the set technique having the lowest bit error ratio value corresponding to the programming cycle.

Method for programming an array of resistive memory cells

A method for resetting an array of Resistive Memory cells by applying a sequence of N reset operations, each reset operation including the application of a reset technique, the method including, at the first reset operation, performing the first reset operation by applying the reset technique having the highest relative correction yield; at the j-th reset operation of the N−1 subsequent reset operations, j being an integer number between 2 and N, defining a reset technique to be used at the j-th reset operation and performing the j-th reset operation.

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GRENOBLE, France

Alessandro Bricalli