Stmicroelectronics S.r.l.

Alessandra Alberti

Antonello Santangelo

Paolo Badala′

Lucio Renna

Clelia Carmen Galati

Leonardo Gervasi

Paolo Badala'

Antonino La Magna

Emanuele Smecca

Salvatore Sanzaro

Gas sensor, comprising: a substrate of semiconductor material; a first working electrode on the substrate; a second working electrode on the substrate, at a distance from the first working electrode; an interconnection layer extending in electrical contact with the first and the second working electrode, configured to change its conductivity when reacting with gas species to be detected. The interconnection layer is of titanium oxide, has a porosity between 40% and 60% in volume and is formed by a plurality of meso-pores having at least one dimension in the range 6-30 nm connected to nano-pores having at least one respective dimension in the range 1-5 nm.

MOx-based gas sensor and manufacturing method thereof

An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

Integrated circuits with backside metalization and production method thereof

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Gravina di Catania, Italy

Alessandra Alberti