Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Ales Markytan

Christian Gärtner

Gerhard Kuhn

Christian Gaertner

Stephan Kaiser

Jan Marfeld

Peter Brick

Julius Muschaweck

Christian Neugirg

Horst Varga

Ulrich Streppel

Roland Schulz

Joachim Frank

Manfred Scheubeck

Herbert Brunner

Ion Stoll

Alexander Linkov

Uli Hiller

Hans-Christoph Gallmeier

Thomas Schlereth

Erik Heinemann

Wolfgang Mönch

Albert Schneider

Steffen Block

Christoph Neureuther

Janick Ihringer

An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Optical element and lighting device comprising an optical element

A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Semiconductor light source with a first and a second LED chip and a first and a second fluorescent substance

A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Lighting module for emitting mixed light

An optical element has an optical body and a number of microstructures. The optical body takes the form of a half-shell and has an inner face and an outer face. The microstructures form the inner and/or outer face of the optical body at least in places and are light-scattering refractive structures. The invention further relates to a radiation-emitting device having at least one semiconductor component and one such optical element.

Optical element and radiation-emitting device comprising such an optical element

A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Lighting device

A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Surface light guide and planar emitter

In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina

An optoelectronic component comprises: at least one semiconductor chip suitable for generating electromagnetic radiation, a beam shaping element (), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (), and which has an outer contour () with respect to a coordinate system () perpendicular to the optical axis (), wherein the contour () constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a, a) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a, a): an ellipse segment (b), a linear part (c) a second ellipse segment (d), a further linear part (c) and a third ellipse segment (b).

Optoelectronic component

A lighting device may include: a rod-shaped carrier body with at least one first and one second mounting side and a main direction of extent, first semiconductor light-emitting elements on first mounting faces of the first mounting side, and second semiconductor light-emitting elements on second mounting faces of the second mounting side, wherein the first and the second mounting sides face away from one another, wherein the mounting faces are formed by depressions in the mounting sides, which depressions are arranged so as to be spaced apart along the main direction of extent, and wherein the first semiconductor light-emitting elements are identical to one another and the second semiconductor light-emitting elements are identical to one another.

An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Optoelectronic semiconductor device

A mixed light source has a first semiconductor component, which is provided for generating a first radiation fraction, and a second semiconductor component, which is provided for generating radiation of a second radiation fraction different from the first radiation fraction. The first semiconductor component is mounted by a first mounting point on a first heat sink with a first thermal resistance R. The second semiconductor component is mounted by a second mounting point on a second heat sink with a second thermal resistance R. The thermal resistances Rand Rare different from one another.

Mixed light source

The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Surface light source

An optoelectronic semiconductor component, includes at least two optoelectronic semiconductor chips, which are located on a common mounting surface. An optical element is arranged downstream of the semiconductor chips in a main emission direction and is spaced from the semiconductor chips. In a direction transverse to the main emission direction the optical element has a transmission gradient in a transitional region. The transitional region does not overlap the semiconductor chips, when viewed in plan view onto the mounting surface.

Optoelectronic semiconductor component

A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

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Wuppertal, Germany

Ales Markytan