Asml Netherlands B.v.

National Taiwan University

Alek Chi-Heng Chen

Mircea Dusa

Kuen-Yu Tsai

Tsann-Bim Chiou

Jia-Han Li

Calibration of models for manufacturing processes that are subject to circuit layout proximity effects is performed, including optical proximity correction (OPC) model calibration. A target structure is produced using a layout and a manufacturing process. The target structure is illuminated and an electromagnetic scattering property is detected. A manufacturing process model for simulation of the manufacturing process is produced, which comprises at least one manufacturing process parameter determining a model electromagnetic scattering property using the manufacturing process model and the layout. The model electromagnetic scattering property is compared to the detected electromagnetic scattering property and based on the result of the comparison, calibrated manufacturing process parameters are output for calibrating the manufacturing process model. The determining and the layout may include determining structural information corresponding to the target structure using the manufacturing process model and determining the model electromagnetic scattering property using the structural information.

Method for calibrating a manufacturing process model

In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program

A multiple exposure method for enhancing the image resolution in a lithographic system is disclosed. The method comprises, for example, decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a positive tone resist layer and a relatively thin positive tone developable material layer on top of a target layer which is to be patterned with the desired dense feature pattern. The positive tone developable material absorbs exposure radiation during a first patterning exposure and, after development, during a second patterning exposure to prevent exposure of at least a portion of the positive tone resist layer, underneath exposed portions of the positive tone developable material layer, to an exposure dose above a fraction of an energy-to-clear exposure dose associated with the positive tone resist layer.

Substrate, method of exposing a substrate, machine readable medium

A double exposure method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a first positive tone resist layer and a thin second positive tone resist layer on top of a target layer which is to be patterned with the desired dense line pattern. The second resist material is absorbing exposure radiation during a first patterning exposure and after development during a second patterning exposure to prevent exposure above energy-to-clear of at least a portion of the first resist material underneath exposed portions of the second resist material layer.

Growing community of inventors

Taipei, Taiwan

Alek Chi-Heng Chen