Technion Research & Development Foundation Limited

Elop Electro-optics Industries Ltd.

Aldona Sashchiuk

Efrat Lifshitz

Vladimir Krupkin

Ehud Galun

Marina Sirota

Lilac Amirav

Maya Brumer-Gilary

Ruth Osovsky

Viktoria Kloper

Ariel Kigel

Dima Cheskis

The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSeSstructure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTeSeor CdTeSstructure.

Core-alloyed shell semiconductor nanocrystals

A passive Q-switch for a laser system, and a method for its production. The laser is operative at near infrared wavelength region, including the eye-safe region. The Q-switch includes a saturable absorber based on IV-VI semiconductor nanocrystals (NCs), embedded in a polymer matrix. The NCs preferably include lead selenide, lead sulfide, or lead selenide sulfide. The NCs may be surface passivated, and may feature a PbSe/PbS core-shell configuration.

Passive Q-switch laser

Growing community of inventors

Nazareth-Illit, Israel

Aldona Sashchiuk