U.S. Philips Corporation

Albertus G Dirks

Robertus A Wolters

Hidde Herman Brongersma

Marian Nelia Webster

Edwin T Swart

Johannes W Biesterbos

A method of manufacturing a semiconductor device with a multilayer wiring (6, 11, 14) with aluminum conductor tracks (7, 12, 15) which are insulated from one another by insulating layers (9, 13). According to the method, an aluminum conductor track (20) provided on a surface (1) of a semiconductor body (2) is covered with a layer of insulating material (21), whereupon a contact window (22) with a wall (23) reaching down to the conductor track is formed in this insulating layer. A conductive intermediate layer (24, 28) and an aluminum layer (25, 29) are provided on this wall, whereupon a heat treatment is carried out such that aluminum (26) grows from the conductor track into the contact window. A conductive intermediate layer of titanium is provided on the wall of the contact window. A very thin, closed aluminum layer, which remains closed also during the heat treatment, can be formed on this titanium layer, which can be provided on the wall with a small thickness. The method is accordingly suitable for making semiconductor devices with multilayer wirings having contact windows of 0.5 .mu.m or smaller and having aspect ratios above 1.

Method of manufacturing a semiconductor device with a multilayer wiring

A semiconductor device with a semiconductor body (1) whose surface (4) is provided with a barrier layer (8) of Ti.sub.x W.sub.1-x, with 0.1&lt;x&lt;0.3. The barrier layer (8) is used, for example, between contact zones (3) of silicon or metal silicides provided in the semiconductor body (1) and conductor tracks (9) of aluminium provided on the surface (4) with the purpose of counteracting chemical reactions between silicon and aluminium. According to the invention, the barrier layer (8) is so deposited that in this layer the distance between the (100) lattice faces of tungsten is greater than 2.25.ANG.. It is achieved in this way that the barrier layer (8) has equally good or even better barrier properties as/than a Ti.sub.x W.sub.1-x layer which has been exposed to air for a few days. It is found that, if the barrier layer (8) is deposited by means of a sputter deposition process, the distance between the (100) lattice faces of W is determined by the voltage applied to the sputter target during deposition.

Semiconductor device having a surface with a barrier layer of Ti.sub.x

An optically readable information disc having a supporting plate which on at least one side has a layer of synthetic resin in which an optically readable structure has been provided which is covered with a layer of a metal alloy which is selected from the group consisting of a Ag-Cu alloy with more than 40 at.% Ag, a Cu-Cr alloy with more than 8 at.% Cr, an Al-Cr alloy with more than 75 at.% Al, an Al-Cu alloy with more than 40 at.% Al, an Al-B alloy with more than 70 at.% Al, an Al-Mn alloy with at least 75 at.% Al and an Al-lanthanide alloy with 0.1 to 3 at.% of the lanthanide.

Optically readable information disc having a reflection layer formed

A storage medium for use in a device for thermomagnetically writing and magneto-optically reading information. The medium comprises a nonmagnetizable substrate bearing an amorphous layer of a rare earth metal-iron type alloy (which contains from 20 to 30 atomic percent rare-earth metal/iron and 70 to 80 atomic percent iron) to which 15 to 30 atomic percent boron is added. The amorphous layer has a perpendicular easy axis of easy magnetization, required for the writing process, with a good stability against crystallization when heated to higher temperatures.

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Eindhoven, Netherlands

Albertus G Dirks