Stmicroelectronics S.r.l.

Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics S.a.

Stmicroelectronics (rousset) Sas

Alberto Pagani

Federico Giovanni Ziglioli

Bruno Murari

Giovanni Girlando

Alessandro Finocchiaro

Alessandro Motta

Sara Loi

Alessandro Paolo Bramanti

Giulio Ricotti

Domenico Giusti

Ubaldo Mastromatteo

Giuseppe Ferla

Giuseppe Palmisano

Marco Ferrera

Fulvio Vittorio Fontana

Guido Chiaretti

Giovanni Sicurella

Daniele Caltabiano

Roberto Antonio Canegallo

Marco Morelli

Antonello Santangelo

Mauro Scandiuzzo

Eleonora Franchi Scarselli

Roberto Cardu

Marco Ronchi

Sergio Tenucci

Marco Spinetta

Bernard Ranchoux

Jean-Michel Bard

Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Method for producing a probe used for testing integrated electronic circuits

A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

Pressure sensing device with cavity and related methods

Method for manufacturing probes for testing integrated electronic circuits

A method for making an integrated micro-electromechanical device includes forming a first body of semiconductor material having a first face and a second face opposite the first face. The first body includes a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. The method further includes forming at least one first magnetic via extending between the second face and the buried cavity of the first body, forming a first magnetic region extending over the first face of the first body, and forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via.

Integrated micro-electromechanical device of semiconductor material having a diaphragm

Various embodiments of the present disclosure provide a power device including at least one first conductive element adapted to generate a magnetic field when traversed by a current, and characterised in that it further comprises a Hall sensor electrically insulated from the first conductive element. The sensor and the first conductive element are mutually arranged so as to detect said magnetic field indicative of the current that traverses the first conductive element.

Power device, system including the power device, method for manufacturing the power device, and method for controlling the power device

Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.

Triaxial magnetic sensor for measuring magnetic fields, and manufacturing process thereof

Embodiments are directed to electrically confined ballistic devices, circuits, and networks. One such device includes a heterostructure that has a first semiconductor layer, a second semiconductor layer, and a two-dimensional electrode gas (2DEG) layer between the first and second semiconductor layers. The device further includes an input electrode electrically coupled to the 2DEG layer and an output electrode electrically coupled to the 2DEG layer. A first confinement electrode is positioned on the heterostructure. The first confinement electrode, in use, generates first space charge regions which at least partially define a boundary of the ballistic device within the 2DEG layer between the input electrode and the output electrode in response to a first voltage.

Electrically confined ballistic devices and methods

Method for producing probes for testing integrated electronic circuits

A device includes a particle propagation channel, a particle deflector, a particle source, and a particle sink. The particle deflector facilitates ballistic transport of particles from a particle inflow portion through a particle flow deflection portion to a particle outflow portion. The particle deflector is arranged at the particle flow deflection portion and is activatable to deflect particles in the flow deflection portion and is configured to selectively prevent the particles from reaching the particle outflow portion. The particle source and particle sink are configured to cause a current path of the particles through the device.

Ballistic transport device and corresponding component

A pad forms a connection terminal suitable for coupling circuit elements integrated in a chip to circuits outside the chip itself. At least one inductor is provided for use in the reception/transmission of electromagnetic waves or for supplying the chip with power or both. The connection pad and inductor are combined in a structure which reduces overall occupied area. A magnetic containment structure surrounds the structure to contain a magnetic field of the inductor.

Inductive connection structure for use in an integrated circuit

Embodiments are directed to two-dimensional electron gas (2DEG)-confined 2DEG devices and methods. One such device includes a substrate and a heterostructure on the substrate. The heterostructure includes a first semiconductor layer, a second semiconductor layer, and a 2DEG layer between the first and second semiconductor layers. The device further includes a 2DEG device having a conduction channel in the 2DEG layer. An isolation electrode overlies the heterostructure and at least partially surrounds a periphery of the 2DEG device. The isolation electrode, in use, interrupts the 2DEG layer in response to an applied voltage.

Two-dimensional electron gas (2DEG)-confined devices and methods

A method of making an integrated circuit (IC) includes forming circuitry over a top surface of a semiconductor substrate having the top surface and an opposite bottom surface. An antenna is formed in an interconnect layer formed above the semiconductor substrate, where the antenna is coupled to circuitry. A seal ring is formed around a periphery of the interconnect layer. The seal ring is disposed around the antenna and the circuitry. A trench with a solid-state insulating material is formed. The trench extends vertically into the semiconductor substrate and extends laterally across the IC.

IC with insulating trench and related methods

A process for manufacturing an optical system includes forming a first hydrophobic surface at a semiconductor substrate, providing a first drop of transparent material having a first shape on the first hydrophobic surface, and allowing the first drop to harden to form a first optical element having the first shape. The optical system may be a particle detector, and the process may optionally further include forming a light source at the semiconductor substrate configured to generate a light beam that passes through the first optical element and a cavity to a photodetector.

Integrated detection device, in particular detector particles such as particulates or alpha particles

A building structure includes a block of building material and a magnetic circuit buried in the block of building material. The structure also includes a plurality of sensing devices buried in the block of building material. Each sensing device may include a contactless power supplying circuit magnetically coupled with the magnetic circuit to generate a supply voltage when the magnetic circuit is subject to a variable magnetic field.

Block made of a building material

A harvesting and scavenging circuit includes an inverse electrowetting harvesting and scavenging circuit including a moveable mass with a moveable electrode that is moveable in three-dimensions relative to a second electrode having a first insulating layer covering a surface of the second electrode. A conductive fluid positioned between the first insulating layer and the moveable electrode. A magnetic energy harvesting and scavenging circuit includes at least one permanent magnetic segment on the movable mass and at least one energy harvesting and scavenging coil positioned proximate the moveable mass. Energy harvesting and scavenging circuitry is electrically coupled to the moveable electrode and the second electrode and is coupled to the at least one energy harvesting and scavenging coil. The energy harvesting and scavenging circuitry provides electrical energy generated through reverse electrowetting and magnetic energy stored in the at least one energy harvesting and scavenging coil.

Growing community of inventors

Nova Milanese, Italy

Alberto Pagani