Imperial College Innovations Limited

Alberto Lauri

Yi Li

Anthony Edward George Cass

Firat Guder

Giandrin Barandun

Michael Kasimatis

Nicholas Alexander Güsken

Thao Thi Le

Stefan Maier

Estefania Nunez-bajo

Maximilian Grell

Can Dincer

A method of manufacturing a metal fabric or membrane, the method comprises providing an ink comprising a plurality of semiconductor particles disposed in a first solvent. The method comprises applying the ink to a fabric or membrane to obtain a fabric or membrane comprising a plurality of semiconductor particles. Finally, the method comprises contacting the fabric or membrane comprising the plurality of semiconductor particles with a deposition solution comprising a second solvent, an autocatalytic agent, and metal cations to thereby cause a reaction to occur such that the metal cations are reduced and at least partially displace the semiconductor particles, to thereby provide a metal fabric or membrane.

Metal-containing fabrics and membranes, and method of manufacturing thereof

The present invention provides an infrared photodetection device for detecting infrared radiation with a wavelength of 700 nm or larger comprising: a carrier transfer member comprised of a non-metallic material with a band gap; an absorber on one side of the carrier transfer member, and in electrical contact with the carrier transfer member, the absorber being a metallic material in which electron-hole pairs are excited upon absorption of infrared radiation; and a semiconductor on the other side of the carrier transfer member, and in electrical contact with the carrier transfer member; and wherein the carrier transfer member contains trap states such that majority carriers excited in the absorber due to infrared radiation are conducted via the trap states through the carrier transfer member to be collected b the semiconductor.

Schottky-barrier type infrared photodetector

Growing community of inventors

London, United Kingdom

Alberto Lauri