Stmicroelectronics S.r.l.

Stmicroelectronics Gmbh

Alberto Jose′ Di Martino

Antonino Conte

Gianbattista Lo Giudice

Giovanni Matranga

Rosario Roberto Grasso

Kailash Khairnar

A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.

Methods and devices for erasing non-volatile memory

A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.

High throughput programming system and method for a phase change non-volatile memory device

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Palagonia, Italy

Alberto Jose′ Di Martino