Avco Corporation

Albert W Hauze

Raymond J Suplinskas

James A Cornie

Thomas W Henze

Harold E Debolt

Harold E DeBolt

Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 2370.degree. F., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin protective coating of boron-based refractory material on the surface of the silicon carbide filament both adds strength and provides a surface which is readily bonded to both metals and epoxy matrix materials during the casting of composite structures.

Boron coated silicon carbide filaments

The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

Method of applying a carbon-rich surface layer to a silicon carbide

Coated stoichiometric silicon carbide

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Chelmsford, MA, United States of America

Albert W Hauze