Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno

Stmicroelectronics S.r.l.

Integrated Plasmonics Corporation

Albert Polman

Giuseppe Ferla

Salvatore Lombardo

Salvatore Ugo Campisano

Gerard Nicolaas Van Den Hoven

Ferruccio Frisina

Mario Giuseppe Saggio

Salvatore Coffa

Robert Joseph Walters

Jurriaan Schmitz

Nicholas Hamelin

Peter Kik

Ihor Brunets

An integrated plasmonic sensing device is described wherein the integrated device comprises: at least one optical source comprising a first conductive layer and a second conductive layer, and a optical active layer between at least part of said first and second conductive layers; at least one nanocavity extending through said first and second conductive layers and said optical active layer, wherein said optical source is configured to generate surface plasmon modes suitable for optically activating one or more resonances in said nanocavity; and, at least one optical detector comprising at least one detection region formed in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense optically activated resonances in said nanocavity.

Integrated plasmonic nanocavity sensing device

An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.

Infrared detector device of semiconductor material and manufacturing process thereof

An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Electro-luminescent material, solid state electro-luminescent device and

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Amsterdam, Netherlands

Albert Polman