Micron Technology Incorporated

Albert P Chan

Terrence B McDaniel

Vinay Nair

Luca Fumagalli

Che-Chi Lee

Clement Jacob

Kehao Zhang

Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

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Boise, ID, United States of America

Albert P Chan