UChicago Argonne, LLC

Brookhaven Science Associates, Lcc

Albert Macrander

Raymond P Conley

Jorg M Maser

Chian Qian Liu

Hyon Chol Kang

Ralu Divan

Gregory Brian Stephenson

Hanfei Yan

Nathalie C D Bouet

G Brian Stephenson

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF, Cl, and Owith RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Technique for etching monolayer and multilayer materials

A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90&#xb0; as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

Zone compensated multilayer laue lens and apparatus and method of fabricating the same

A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 &#x3bc;m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.

Method of making and structure of multilayer laue lens for focusing hard x-rays

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Naperville, IL, United States of America

Albert Macrander