Qualcomm Incorporated

Albert Kumar

Vasisht M Vadi

Paul Penzes

Ramaprasath Vilangudipitchai

Sreeker Dundigal

Hai Dang

A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

High-voltage tolerant level shifter using thin-oxide transistors and a middle-of-the-line (MOL) capacitor

In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.

Growing community of inventors

San Jose, CA, United States of America

Albert Kumar