Redwood Microsystems, Inc.

Smc Kabushiki Kaisha

Nanoink, Inc.

Novasolix, Inc.

Monolithic 3d Inc.

Albert Karl Henning

Laurence Hager Cooke

Andreas G Hegedus

Paul B Comita

Robert E Cousins

Sean S Cahill

Joseph S Fragala

Bradford A Cozad

Michael J Selser

Art Zias

Norm Nystrom

Phil Mauger

Richard T Preston

John Burke

Yao Te Cheng

David B Cooke

Zvi Or-Bach

Brian Cronquist

Mark Zdeblick

James M Harris

John S Fitch

Raymond Roger Shile

Michael R Nelson

Dean Allyn Hopkins, Jr

John Edward Bussan

Jeffrey R Rendlen

Leslie Joe Lilly

Darin S Olson

Michael Selser

Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

Solar antenna array fabrication

A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors, where the interconnection layers include copper or aluminum; forming a shielding heat conducting layer overlaying the interconnection layers; forming an isolation layer overlaying the shielding heat conducting layer; forming a second semiconductor layer overlying the isolation layer, and processing the second semiconductor layer at a temperature greater than about 400&#xb0; C., where the interconnection layers are kept at a temperature below about 400&#xb0; C.

Method of processing a semiconductor device

A device comprising at least one cantilever comprising at least one piezoresistor is described, where the cantilevers comprise silicon nitride or silicon carbide and the piezoresistors comprise doped silicon. Methods for making and using such a device are also provided.

Piezoresistor height sensing cantilever

Devices for performing nanofabrication are provided which provide small volume reaction space and high reaction versatility. A device may include a reaction chamber adapted for nanoscale modification of a substrate and vacuum conditions; a scanning probe tip assembly enclosed within the reaction chamber; a first port coupled to the reaction chamber for delivering a gas; a second port coupled to the reaction chamber for applying a vacuum; and a substrate assembly insertedly mounted to the reaction chamber. The reaction chamber may include a body having one or more flexible walls and one or more supports to prevent the reaction chamber from collapsing under a vacuum. The device may further include an electrical conduit for coupling the tips of the scanning probe tip assembly to electrical components outside the reaction chamber. Also provided are apparatuses incorporating the devices and methods of using the devices and apparatuses.

Nanomanufacturing devices and methods

Integrated micro-valve is formed to control fluid flow and pressure. The valve converts supplied energy to mechanical energy through a means for energy conversion resident above a flexible wall or membrane. In one embodiment a sealed cavity contains a fluid that expands and contracts as it is heated or cooled, thus causing the flexible wall to move. Movement of this wall or membrane is used to move a valve element and dynamically control the opening or closing of a valve port over a predetermined range. Additional means for stiffening are added to the membrane to improve performance.

Dual pedestal shut-off valve

A force or pressure transducer is includes a substrate, a dielectric material disposed on the substrate, a spacing member disposed on the dielectric material, and a resilient element disposed on both the dielectric material and the spacing member. A portion of the resilient element is separated from the dielectric material, and another portion of the resilient element is in contact with the dielectric material. The contact area between the resilient element and the dielectric material varies in response to movement of the resilient element. Changes in the contact area alter the capacitance of the transducer, which can be measured through associated circuitry.

Micro-electromechanical sensor

A force or pressure transducer is disclosed. In one embodiment, the transducer has a substrate, a dielectric material disposed on the substrate, a spacing member disposed on the dielectric material, and a resilient element disposed on the dielectric material and the spacing member. A portion of the resilient element is separated from the dielectric material, and a portion of the resilient element is in contact with the dielectric material. The contact area between the resilient element and the dielectric material varies in response to movement of the resilient element. Changes in the contact area alter the capacitance of the transducer, which can be measured by circuit means.

A method for achieving high flow in valves with small actuation distance is described. A detailed description for a silicon microvalve is provided. An algorithm is described for designing optimized valves.

High-flow microvalve

A thernopneumatic valve comprises a fluid channel plate defining a fluid port. A diaphragm plate is attached to the fluid channel plate. The diaphragm plate includes a displaceable diaphragm to selectively obstruct the fluid port of the fluid channel plate. A thermal isolating heater is connected to the diaphragm plate. The thermal isolating heater includes a thermal isolating heater body with a heating surface, a perimeter wall defining an extended axial cavity to confine a thermopneumatic working fluid that is used to control the position of the displaceable diaphragm, and a diaphragm obstruction structure to limit the motion of the displaceable diaphragm into the extended axial cavity.

Low-power thermopneumatic microvalve

Growing community of inventors

Palo Alto, CA, United States of America

Albert Karl Henning