Asm International N.v.

Phix Photonics Assembly

Albert Hasper

Gert-Jan Snijders

Frank Huussen

Jan Zinger

Theodorus Gerardus Maria Oosterlaken

Marinus J De Blank

Radko Gerard Bankras

Jack Herman Van Putten

Lieve Vandezande

Ernst Hendrik August Granneman

Ronald Dekker

Menso Hendriks

Dimitri Geskus

Christianus Gerardus M De Ridder

Christianus Gerardus Maria Ridder

Cornelis Marinus Kooijman

Jeroen Jan Stoutjesdijk

Chris Gm De Ridder

Gerard Berenpas

Sebastiaan Eliza Nooten

An optical phonograph cartridge includes an optical vibration sensor that operatively couples to a stylus/cantilever to convert, to optical signals, mechanical vibrations representative of the music encoded in the groove of a vinyl record. The optical vibration sensor includes a photonic integrated circuit includes an input waveguide network for conveying light and an output waveguide network for conveying modulated light, wherein the modulated light is generated by a screen that is attached to the cantilever and is disposed between the input and output waveguide networks.

Optical phono cartridge and system

Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl) and ammonia (NH) as precursors. The TiClis flowed into the reactor in temporally separated pulses. The NHcan also be flowed into the reactor in temporally spaced pulses which alternate with the TiClpulses, or the NHcan be flowed continuously into the reactor while the TiClis introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Deposition of TiN films in a batch reactor

Chemical vapor deposition of TiN films in a batch reactor

Processing methods and internal reactor parts avoid peeling and particle generation caused by differences in the coefficients of thermal expansion (CTE's) between reactor parts and films deposited on the reactor parts in hot wall CVD chambers. Conventional materials for reactor parts have relatively low CTE's, resulting in significant CTE differences with modem films, which can be deposited on the surfaces of reactor parts during semiconductor processing. Such CTE differences can cause cracking and flaking of the deposited films, thereby leading to particle generation. Reactor parts, such as boats and pedestals, which undergo large thermal cycles even in a hot wall chamber, are made of materials having a CTE greater than about 5&#xd7;10K, in order to more closely match the CTE of deposited materials, such TiN. The decreased CTE differences decrease differences between the expansion and contraction of the reactor parts and deposited films, leading to decreased cracking, flaking and, ultimately, decreased particle generation.

Parts for deposition reactors

A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550&#xb0; C., and at temperatures within 100&#xb0; C. of one another.

In situ silicon and titanium nitride deposition

Sorting/storage device for wafers. A sorting device is provided in which at least two cassettes containing wafers may be present and the wafers are moved from one cassette to the other cassette or vice versa. If appropriate, a measuring station may be present in the sorting device. In the immediate vicinity of the sorting device, the cassettes are stored in a magazine which is designed for this purpose and the cassettes are moved using a handling device for cassettes.

Sorting/storage device for wafers and method for handling thereof

A process tool controller of a semiconductor processing tool is provided with software that enables collecting, monitoring and logging information regarding the tool's consumption. Data is collected from the devices used for control of process conditions via the analog and digital inputs and outputs of the process tool controller. Consequently, the devices for controlling the process conditions have the additional function of measuring the tool's consumption. In this way the information regarding the tool's consumption is completely collected on board of the process tool. The parameters to be monitored and reported can be configured by the user, with use of a configuration editor, resulting in optimum flexibility of the system. In the illustrated embodiment, the user interface of the consumption monitoring and logging software is integrated into the user interface of the process control and monitoring software. The information regarding the tool's consumption can be communicated to a supervisor computer via a network.

Resource consumption calculator

An apparatus for processing substrates comprises a substrate handling chamber, including a substrate handling robot for transferring substrates from cassettes into a substrate carrier. A processing chamber is provided adjacent to the handling chamber, including one or more furnaces adapted to process a plurality of the substrates supported in the carrier. A weighing device is accessible to the substrate handler. The weighing device is adapted to weigh the substrates before and after processing the substrates in the processing chamber. The illustrated process is a curing anneal for a low k polymer previously deposited on the substrates.

Method of processing substrates with integrated weighing steps

An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

Apparatus for treating wafers, provided with a sensor box

Device for processing semiconductor wafers, comprising at least one processing chamber which is completely closed with the exception of a connection to a distribution. System. In said at least one processing chamber there are situated preferably two reactors and a common feed/removal system in order to be able to subject wafers, which may optionally be arranged in boats, to an identical processing operation.

Device for processing semiconductor wafers

Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.

Method and device for transferring wafers

A furnace includes a core tube that has an elongate boundary wall and is configured to accommodate wafers for processing the wafers in a treatment atmosphere. The furnace includes a cooling chamber defined between the elongate boundary wall and an outer casing of the furnace, wherein the outer casing includes a heating element and has first lateral, circumferentially spaced openings in proximity of a first end of the outer casing and second lateral, circumferentially spaced openings in proximity of a second end of the outer casing. Cooling gas is supplied through one of the first and second lateral, circumferentially spaced openings to a region of one end of the cooling chamber and provides for a cooling atmosphere. The cooling gas is guided along the cooling chamber with a uniform distribution of flow and discharged through one of the first and second lateral, circumferentially spaced openings from a region of an opposite end of the cooling chamber. A direction of flow of the cooling gas is periodically reversed during cooling, wherein the cooling gas is guided along an essentially closed circuit so that the cooling gas is preserved and so that the cooling atmosphere is separated from the treatment atmosphere. A liquid-gas heat exchanger cools the cooling gas.

Method for cooling a furnace, and furnace provided with a cooling device

A vertical furnace for processing wavers positioned on a support structure. The furnace comprises an inner sleeve, heating means and an outer sleeve. To support the inner sleeve on the support structure a support sleeve is provided engaging with its top and lower part of the inner sleeve and resting with its lower end on the support structure.

Growing community of inventors

Meppel, Netherlands

Albert Hasper