Thales

Centre National De La Recherche Scientifique

Thomson-csf

Université Paris—sud

Université Paris-saclay

Albert Fert

Vincent Cros

Joao Sampaio

Alain Schuhl

Julie Grollier

Alain Friederich

Henri Jaffres

Noah Van Horne

Nicolas Reyren

Pierre Seneor

Manuel Munoz Sanchez

Frédérich Nguyen Van Dau

Luiz Fernando Schelp

Fr&eacute;d&eacute;ric Petroff

Disclosed is a system () for generating skyrmions, including: a gun () including a wall-forming region () made from a first material, the region () defining an outer space () made from a second material different from the first material and an inner space () made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetization reversal device () that can reverse the magnetization at the interface between the region () and the inner space ().

Skyrmion generation system

A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n&#x3e;1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state ni is different from said characteristic associated with a state nj when the states ni and nj are two different states among the n states.

Memory device, comprising at least one element and associated method spintronics

The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers

Variable capacitive device, such as a capacitor, controllable in voltage Vc including at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other. The use of the capacitor according to the invention in a resonant circuit.

Variable capacitor voltage-controllable by use of coulomb blocking phenomenon

A magnetic sensor having a layer of nonmagnetic insulator including at least one layer of ferromagnetic particles. This combination of layers is sandwiched between two ferromagnetic electrodes. Electrons are transported by the tunneling effect between each electrode and the ferromagnetic particles. The tunneling resistance depends on the orientation of the magnetization of the electrodes and therefore varies in the presence of the magnetic field. The multichannel and multistage nature of the tunneling conduction eliminates the problems of short-circuiting by porosity, thus leading to less difficult fabrication and improved robustness in terms of breakdown. The possible thermal fluctuations of the magnetic moments of the aggregates can be suppressed by the choice of a magnetic material for the part of the insulating layer which contains the aggregates.

Magnetic field sensor and method for making same

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Paris, France

Albert Fert