Sandisk Technologies Inc.

Albert Chen

Jiahui Yuan

Xiang Yang

Akira Okada

A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines and disposed in memory holes each coupled to one of a plurality of bit lines. The memory cells are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the plurality of word lines and the memory holes and is configured to read the memory cells in a read operation. The control means is also configured to adjust at least one word line read timing and ramping parameter used during the read operation based on an amount of cycling of the memory cells.

Variable read method for read time performance improvement of non-volatile memory

The memory device includes a memory block with an array of memory cells that are arranged in word lines. The word lines are in electrical communication with respective word line drivers and switches. Control circuitry is configured to program the memory cells of a selected word line in a programming operation during which the control circuitry applies an elevated voltage to the selected word line and receives a command to suspend the programming operation. With the word line switch associated with the selected word line turned on, the control circuitry ramps the selected word line from the elevated voltage to a reduced gate holding voltage and then turn the word line switch associated with the selected word line off to electrically isolate the selected word line from the associated word line driver so that the selected word line remains at the gate holding voltage until the programming operation resumes.

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Milpitas, CA, United States of America

Albert Chen