Intel Corporation

Other

Albert Chen

Oleg Golonzka

Nathan Strutt

Travis W LaJoie

Pedro Quintero

Van H Le

Abhishek A Sharma

Elijah V Karpov

Hui Jae Yoo

Christopher J Jezewski

Wilfred Gomes

Fatih Hamzaoglu

Miriam Ruth Reshotko

Abhishek Anil Sharma

Gregory George

Huiying Liu

Duan-Jun Chen

Moshe Dolejsi

Vinaykumar Hadagali

Alekhya Nimmagadda

Deepyanti Taneja

Tarannum Tiasha

Yue Liu

Shardul Wadekar

Daniel J Schinke

Vladimir Nikitin

James O'Donnell

An integrated circuit includes a first layer, and a second layer above the first layer. A third layer is between a first section of the first layer and a first section of the second layer. A fourth layer is laterally adjacent to the third layer, the fourth layer between a second section of the first layer and a second section of the second layer. In an example, a first dielectric material of the third layer is different (e.g., one or both of compositionally different and structurally different) from a second dielectric material of the fourth layer. In an example, the third and fourth layers are etch stop layers. In some cases, the third and fourth layers are coplanar with each other with respect to their top surfaces, or their bottom surfaces, or both their top and bottom surfaces.

Hybrid etch stop layers

An example IC device includes a frontend layer and a backend layer with a metallization stack. The metallization stack includes a backend memory layer with a plurality of memory cells with backend transistors, and a layer with a plurality of conductive interconnects (e.g., a plurality of conductive lines) and air gaps between adjacent ones of the plurality of interconnects. Providing air gaps in upper metal layers of metallization stacks of IC devices may advantageously reduce parasitic effects in the IC devices because such effects are typically proportional to the dielectric constant of a surrounding medium. In turn, reduction in the parasitic effects may lead to improvements in performance of, or requirements placed on, the backend memory.

Backend memory with air gaps in upper metal layers

A memory apparatus includes an interconnect in a first dielectric above a substrate and a structure above the interconnect, where the structure includes a diffusion barrier material and covers the interconnect. The memory apparatus further includes a resistive random-access memory (RRAM) device coupled to the interconnect. The RRAM device includes a first electrode on a portion of the structure, a stoichiometric layer having a metal and oxygen on the first electrode, a non-stoichiometric layer including the metal and oxygen on the stoichiometric layer. A second electrode including a barrier material is on the non-stoichiometric layer. In some embodiments, the RRAM device further includes a third electrode on the second electrode. To prevent uncontrolled oxidation during a fabrication process a spacer may be directly adjacent to the RRAM device, where the spacer includes a second dielectric.

Resistive random-access memory devices and methods of fabrication

A memory device structure includes a first electrode, a second electrode, a switching layer between the first electrode and the second electrode, where the switching layer is to transition between first and second resistive states at a voltage threshold. The memory device further includes an oxygen exchange layer between the switching layer and the second electrode, where the oxygen exchange layer includes a metal and a sidewall oxide in contact with a sidewall of the oxygen exchange layer. The sidewall oxide includes the metal of the oxygen exchange layer and oxygen, and has a lateral thickness that exceed a thickness of the switching layer.

Resistive random access memory device and methods of fabrication

An RRAM device is disclosed. The RRAM device includes a bottom electrode, a high-k material on the bottom electrode, a top electrode, a top contact on the top electrode and an encapsulating layer of AlO. The encapsulating layer encapsulates the bottom electrode, the high-k material, the top electrode and the top contact.

Retention improvement by high-k encapsulation of RRAM devices

A plank assist device is presented comprising a base and a strap. The base has a first portion for supporting a human palm and a second portion for supporting a portion of a human thumb. The first portion comprises a first portion top surface, a first portion bottom surface, a first portion rear end and a first portion front end. The second portion comprises a second portion top surface, a second portion bottom surface, a second portion rear end and a second portion front end. The second portion is shorter in length and narrower in width than the first portion. In addition, the first portion rear end may be higher in height than the first portion front end, and the second portion rear end may be higher in height than the second portion front end.

Plank assist device

The problem of 3D panel display systems either (a) requiring special glasses to separate left and right images, or (b) having auto-stereoscopic 3D with compromised fidelity, is solved by providing, for each of a plurality of left and right sub-pixels, both (1) means for separating the left and right image signals (e.g., alternating wedges, prisms, off-axis self-sourcing pixels, etc.), and (2) means for multiplexing the separated left and right signals to a plurality of viewers (e.g., gratings, such as amplitude gratings, phase gratings, etc.), such that (1) the left image is provided to a plurality of virtual volume apertures (VVA) containing positions of the left eyes of the plurality of viewers, and (2) the right image is provided to a plurality of virtual volume apertures (VVA) containing positions of the right eyes of the plurality of viewers. Glass-free 3D systems consistent with the present invention may treat far field optical signals from the display panel as electro-magnetic waves (and therefore treat diffraction and interference properties as significant, dominating far field optical distribution) rather than as rays consistent with geometric optical theory.

Auto stereoscopic three-dimensional panel display systems and methods supporting improved fidelity display to multiple simultaneous viewers

A flexible adhesive notepad has a tacky elastomeric layer made of a naphthenic oil-impregnated thermoplastic rubber, and a face layer made of a polymer film permanently adhered to the elastomeric layer by an oil-based adhesive. The face layer has graphics to emulate a notebook. The graphics include an image of a blank sheet of a bound notebook. The face layer and elastomeric layer have a common periphery that emulates a notebook. The periphery has the shape of a bound notebook.

Adhesive notepad

An apparatus for preventing unwanted telephone calls adapted to operate in conjunction with a conventional telephone and an associated telephone line. A playback mechanism comprises an integrated circuit adapted to allow the transmission of a message via the telephone line upon the activation thereof for prompting a caller to enter a password. Also included is verification circuitry adapted to accept via the telephone line a first password and further transmit an actuation signal upon the positive verification of the first password with a predetermined second password. Finally, control circuitry is connected to the playback mechanism and verification circuitry. The control circuitry is adapted to activate the playback mechanism and allow the transmission of the message to another party upon the receipt of a call. The control circuitry also accepts the first password and allows communication between the telephone and associated telephone line upon the receipt of the actuation signal from the verification mechanism.

Apparatus for preventing unwanted telephone calls

Growing community of inventors

Portland, OR, United States of America

Albert Chen