Rca Inc.

Albert C Limm

James T O'Brien

Paul Nyul

Ivan Ladany

Thomas V Colgrove

Vincent S Tassia, Jr

An improved semiconductor injection laser diode array having reduced interaction between the elements of the array. The array comprises a substrate, an active layer and a capping layer with a separate electrical contact to the capping layer for each element of the array and a common electrical contact to the substrate. The reduced interaction is obtained by regions of higher electrical conductivity extending through the substrate towards the p-n junction from those portions of the substrate surface opposed to the contacts to the capping layer and by separate electrical contacts to each of these higher conductivity regions. The higher conductivity regions provide a lower resistivity path for current flowing through the p-n junction, thus reducing current spreading.

Injection laser diode array having high conductivity regions in the

Mounted on the metallic base member of a radiation emitter-detector package is a mounting block having a first projection, and a second projection spaced from the first projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is substantially perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device is of the type having a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device.

Radiation emitter-detector package

An electrical contact having low electrical resistance and low optical absorption is fabricated on a semiconductor electroluminescent article of III-V semiconductor material having a P-type region and an N-type region contiguous to each other, with a P-N junction therebetween. In the method of forming the contact, Zn is diffused into a surface of the P-type region opposite the PN junction. Then, a layer of gold is evaporated onto the Zn diffused surface while the device is at a temperature of approximately 400.degree.C.

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Lancaster, PA, United States of America

Albert C Limm