Motorola Corporation

National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

Freescale Semiconductor,inc.

Government of the United States of America, As Represented by the Secretary of Commerce

Sandia National Laboratories

Albert Alec Talin

Bernard F Coll

Kenneth Andrew Dean

Elliot James Fuller

James E Jaskie

Mark D Allendorf

Matthew Stainer

Vitalie Stavila

Francois Leonard

Yi Wei

Jeffrey H Baker

Curtis D Moyer

William J Dauksher

Douglas J Resnick

Steven A Voight

Sapan Agarwal

Kathleen Anne Tobin

Adam Madison Rawlett

Andy E Hooper

Paul A Von Allmen

Yiyang Li

Farid El Gabaly Marquez

David Scott Ashby

Paul VonAllmen

Chenggang Xie

Blake A Simmons

Emmett Howard

Johann T Trujillo

Shawn O'Rourke

Stewart K Griffiths

Matthew Marinella

Henri Lezec

Thomas P Moffat

Suhas Kumar

Amit Kumar Agrawal

Ravichandran Subrahmanyan

Dawn M Skala

Gregory F Cardinale

Eric P Menu

Troy A Trottier

Katharine Lee Harrison

Matthew W Losey

Erich C Walter

Ting Xu

Paul Von Allmen

Tianyao Xiao

Christopher Bennett

Georg Aigeldinger

Daniel V Esposito

Chu-Yeu Peter Yang

Technologies related to an electrochemical random access memory (ECRAM) device are described herein. The ECRAM device includes a channel layer, an electrolyte layer, a reservoir layer, and a conductive contact layer, where the conductive contact layer is in contact with the reservoir layer. A voltage source is coupled to the contact layer and is configured to cause current to flow laterally across the contact layer from one side to another, resulting in the contact layer emitting heat by way of Joule heating. When the ECRAM device is heated to a sufficiently high temperature, a second voltage is applied across the stack of layers, thereby causing ion transport between the reservoir layer and the channel layer.

Electrochemical random access memory device with contact layer as a heat source

A method is disclosed herein which includes obtaining an array of analog memory elements. It also includes programming an analog memory element included in the array, where prior to being programmed the analog memory element has a first value for an electrical property, and where it is programmed to cause the analog memory element to perform a computation included in a series of computations performed by the array. Programming the analog memory element includes applying light or heat to the analog memory element, where a value of the electrical property is changed from the first value to a second value based upon application of light or heat to the analog memory element, and further where upon the value of the electrical property being changed from the first value to the second value, the analog memory element is configured to perform the computation responsive to receipt of an input.

Programming analog memory elements in a neomorphic computing system

An ionogel is formed by mixture of precursors, a catalyst, and an ionic liquid to form a sol-gel. The precursors and the catalyst react to form a solid-phase matrix that includes pores, wherein the ionic liquid is disposed within the pores. The gel is dried by way of thermal or vacuum drying to remove liquid byproducts of the precursor-catalyst reaction and to form a solid-state ionogel that comprises the solid-phase matrix with the ionic liquid disposed therein. The ionogel is immersed in a quantity of a liquid electrolyte that is soluble in the ionic liquid. As the liquid electrolyte dissolves into the ionic liquid, the ionic liquid is displaced by the liquid electrolyte, yielding an ionogel having the liquid electrolyte disposed within its pores.

Ionogel-based batteries and ionogel liquid exchange

A thermally sensitive ionic redox transistor comprises a channel, a reservoir layer, and an electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing concentration of ions in the channel layer. The electrolyte layer is configured to undergo a state change at a state transition temperature. Below the state transition temperature, ions in the electrolyte layer are substantially immobile. Above the state transition temperature, ions can move freely between the reservoir layer and the channel across the electrolyte layer in response to a voltage being applied between the channel and the reservoir layer. When the device is cooled below the state transition temperature or temperature range, the ions are trapped in one or more of the layers because the electrolyte layer loses its ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.

Thermally sensitive state change ionic redox transistor

An ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. The channel exhibits a substantially linear current-voltage relationship in a first range of voltages, and a nonlinear current-voltage relationship in a second range of voltages that is greater than the first range of voltages. One or both of the substantially linear current-voltage relationship or the nonlinear current-voltage relationship of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer. Subject to the first range of voltages, the channel can function as a synapse device. Subject to the second range of voltages, the channel can function as a neuron device.

Systems and methods for dynamically reconfigurable artificial synapses and neurons with tunable activation functions

A thermally sensitive ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel layer. Ionic conductivity of the gate, electrolyte, and channel layers increase with increasing temperature. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer when the device is heated to an elevated temperature. When the device is cooled below the elevated temperature, the ions are trapped in one or more of the layers because the materials lose their ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.

Thermally sensitive ionic redox transistor

A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.

Ionic floating-gate memory device

Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.

Tunable ionic electronic transistor

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Device and methods for writing and erasing analog information in small memory units via voltage pulses

A device including a porous metal organic framework (MOF) disposed between two terminals, the device including a first state wherein the MOF is infiltrated by a guest species to form an electrical path between the terminals and a second state wherein the electrical conductivity of the MOF is less than the electrical conductivity in the first state. A method including switching a porous metal organic framework (MOF) between two terminals from a first state wherein a metal site in the MOF is infiltrated by a guest species that is capable of charge transfer to a second state wherein the MOF is less electrically conductive than in the first state.

Reconfigurable electronics using conducting metal-organic frameworks

A photoactive article includes a substrate including a semiconductor to absorb light and to produce a plurality of charge carriers; a dielectric layer disposed on the substrate; a conductive member disposed on the dielectric layer and opposing the substrate such that the dielectric layer is exposed by the conductive member, the conductive member to receive a portion of the plurality of charge carriers from the substrate; and an electrolyte disposed on the dielectric layer and the conductive member. Making a photoactive article includes forming a dielectric layer on a substrate by rapid thermal oxidation, the dielectric layer comprising an oxide of a semiconductor; and forming a conductive member disposed on the dielectric layer.

Photoactive article, process for making, and use of same

A sensor device including a sensor substrate; and a thin film comprising a porous metal organic framework (MOF) on the substrate that presents more than one transduction mechanism when exposed to an analyte. A method including exposing a porous metal organic framework (MOF) on a substrate to an analyte; and identifying more than one transduction mechanism in response to the exposure to the analyte.

Multiaxis sensing using metal organic frameworks

A composition including a porous metal organic framework (MOF) including an open metal site and a guest species capable of charge transfer that can coordinate with the open metal site, wherein the composition is electrically conductive. A method including infiltrating a porous metal organic framework (MOF) including an open metal site with a guest species that is capable of charge transfer; and coordinating the guest species to the open metal site to form a composition including an electrical conductivity greater than an electrical conductivity of the MOF.

Tunable electrical conductivity in metal-organic framework thin film devices

A method including exposing a mixture of a porous metal organic framework (MOF) and a polymer to a predetermined molecular species, wherein the MOF has an open metal site for the predetermined molecular species and the polymer has a porosity for the predetermined molecular species; and detecting a color change of the MOF in the presence of the predetermined molecular species. A method including combining a porous metal organic framework (MOF) and a polymer, wherein the MOF has an open metal site for a predetermined molecular species and the polymer has a porosity for the predetermined molecular species. An article of manufacture including a mixture of a porous metal organic framework (MOF) and a polymer, wherein the MOF has an open metal site for a predetermined molecular species and the polymer has a porosity for the predetermined molecular species.

Colorometric detection of water using MOF-polymer films and composites

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Livermore, CA, United States of America

Albert Alec Talin