E.i. Dupont De Nemours and Company

Albert A Ballman

Lap K Cheng

August Ferretti

John D Bierlein

Patricia A Morris

Thurman E Gier

Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO.sub.4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO.sub.4, in an amount effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.

Doped crystalline titanyl arsenates and preparation thereof

A composition is disclosed which consists essentially of doped crystalline MTiOXO.sub.4 (wherein M is selected from the group consisting of K, Rb and Tl, X is selected from the group consisting of P and As) which contain at least about 100 ppm total of at least one dopant selected from the group consisting of Ga, Al and Si. The compositions generally have low ionic conductivity, and may be prepared using an improved flux process wherein Ga, Al and/or Si dopant is added to the flux in a total amount of at least about 0.5 mole % and the crystallization temperature is controlled to provide a crystalline composition containing the desired amount of dopant.

Doped crystalline compositions and a method for preparation thereof

Optical waveguides prepared by liquid phase epitaxy comprising a film of M.sub.1-x N.sub.x TiAs.sub.1-a P.sub.a O.sub.5 on a substrate of MTiAs.sub.1-(a+b) O.sub.5 P.sub.(a+30 b) is disclosed.

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Toms River, NJ, United States of America

Albert A Ballman