Element Six Technologies Limited

Harvard College

Element Six Gmbh

Alastair Douglas Stacey

Matthew Lee Markham

Daniel James Twitchen

Hongkun Park

Gregory Scott Bruce

Mikhail D Lukin

Marko Loncar

Wilbur Lew

Ruffin E Evans

Harpreet Kaur Dhillon

Amir Yacoby

Andrew Mark Edmonds

Patrick Maletinsky

Nathalie De Leon

Brendan John Shields

Yiwen Chu

Birgit Judith Maria Hausmann

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV); negatively charged nitrogen-vacancy defects (NV); and single substitutional nitrogen defects (N) which transfer their charge to the neutral nitrogen-vacancy defects (NV) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV]/[NV]), [NV] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T' is a decoherence time of the NVdefects, where T&#x2032; is T* for DC magnetometry or Tfor AC magnetometry.

Nitrogen containing single crystal diamond materials optimized for magnetometry applications

A single crystal CVD diamond component comprising: a surface, wherein at least a portion of said surface is formed of as-grown growth face single crystal CVD diamond material which has not been polished or etched and which has a surface roughness Rof no more than 100 nm; and a layer of NVdefects, said layer of NVdefects being disposed within 1 &#x3bc;m of the surface, said layer of NVdefects having a thickness of no more than 500 nm, and said layer of NVdefects having a concentration of NVdefects of at least 10NV/cm.

Diamond components for quantum imaging, sensing and information processing devices

A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

Synthetic diamond materials for quantum and optical applications and methods of making the same

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Didcot, United Kingdom

Alastair Douglas Stacey