Cvc Products, Inc.

Alan T Stephens, Ii

Dorian Heimanson

Paul H Ballentine

Kevin S Gerrish

A sputtering apparatus for depositing a thin film (,) of magnetic material on a substrate (,) is modified to include a plate-shaped electromagnet (,, or,) for orienting magnetic domains within the film (,). The electromagnet (,, or,) has conductive windings (,, and,; or,) that are arranged for producing a magnetic field (,or,) within a plane (,) corresponding to a surface of the substrate (,). Field strength vectors (,) vary in absolute magnitude between points located along a first axis (,), but have substantially uniform components of magnitude at the same points measured in a common direction along the first axis (,).

Low-pressure processing system for magnetic orientation of thin magnetic film

A sputtering apparatus for depositing a thin film (66) of magnetic material on a substrate (26) is modified to include a plate-shaped electromagnet (34, 44, or 70) for orienting magnetic domains within the film (66). The electromagnet (34, 44, or 70) has conductive windings (38; 46, 48, and 50; or 72) that are arranged for producing a magnetic field (42 or 52) within a plane (60) corresponding to a surface of the substrate (26). Field strength vectors (68) vary in absolute magnitude between points located along a first axis (62), but have substantially uniform components of magnitude at the same points measured in a common direction along the first axis (62).

Sputtering apparatus with magnetic orienting device for thin film

Magnetic orienting device for thin film deposition and method of use

A sputtering system magnetron formed of an array of permanent magnets rotated in proximity to a plane of a target disposed in a vacuum chamber has an improved shape resembling a cross section of an apple. The magnetic path established between oppositely poled pairs of magnets is inturned in a stem region proximate to the axis of rotation for the array and has a pair of opposed lobes extending outward from the stem region in a generally semi-circular form. The lobes lead to and join each other in an indent region opposite the stem region. The maximum distance across the path between the lobes is about double the minimum distance across the path between the stem region and the indent region.

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Dayton, OH, United States of America

Alan T Stephens, Ii