Sarnoff Corporation

Sensors Unlimited

Alan Richard Sugg

Ramon Ubaldo Martinelli

Raymond Joseph Menna

A semiconductor laser device includes a substrate having on a surface thereof a semiconductor diode laser portion and a linear amplifier portion. Each of the laser portion and amplifier portion has a waveguide layer with the waveguide layers being in alignment. The laser portion is of a structure which permits it to generate radiation and emit the radiation from one end. The amplifier has an end that receives the radiation from the laser portion, and another end with emits the radiation after the radiation is amplified. The device emits FM radiation but not IM radiation.

Combined single-frequency laser and linear amplifier

A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor. The photodiode is comprised of heterojunctions of epitaxial material grown on an InP semiconductor substrate ( ). A heavily doped layer ( ) is patterned on top of an InP layer ( ) to define the source of p-type diffusion for the definition of the active region ( ) of the p-n junction. The epitaxially grown source layer ( ) may be comprised of ternary or quaternary III-V semiconductor alloys, typically In Ga As. The principle can be extended to alloy layers that are not lattice-matched to the InP substrate. The p-type dopant is typically Zn, but may also consist of other commonly used p-type dopants such as Be.

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Langhorne, PA, United States of America

Alan Richard Sugg