University of Chicago

The United States of America As Represented by the United States

Other

Arch Development Corporation

Alan R Krauss

Dieter M Gruen

Orlando H Auciello

Michael J Pellin

Shengzhong Liu

Xianzheng Pan

Christopher D Zuiker

Chien-Ping Ju

Ali Erdemir

J Albert Schultz

Gary Elder McGuire

John Arthur Carlisle

Thomas Greene McCauley

Dan Zhou

Ming Ding

Vincent Scott Smentkowski

Cuma Bindal

James M Rigsbee

George J Lamich

John C Holecek

Barry Siskind

Eva-Maria Meyer

Hans-Gerd Busmann

A Bruce DeWald

MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10 atoms/cm of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V /V required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

Tailoring nanocrystalline diamond film properties

A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between &minus;100V and &minus;200 are preferred. Carbon sources may be one or more of CH , C H other hydrocarbons and fullerenes.

Field emission from bias-grown diamond thin films in a microwave plasma

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V /N required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.

Time-of-flight SIMS/MSRI reflectron mass analyzer and method

An article and method of manufacture of a nanocrystalline diamond film. The nanocrystalline film is prepared by forming a carbonaceous vapor, providing an inert gas containing gas stream and combining the gas stream with the carbonaceous containing vapor. A plasma of the combined vapor and gas stream is formed in a chamber and fragmented carbon species are deposited onto a substrate to form the nanocrystalline diamond film having a root mean square flatness of about 50 nm deviation from flatness in the as deposited state.

Smooth diamond films as low friction, long wear surfaces

A filtered cathodic arc deposition method and apparatus for the production of highly dense, wear resistant coatings which are free from macro particles. The filtered cathodic arc deposition apparatus includes a cross shaped vacuum chamber which houses a cathode target having an evaporable surface comprised of the coating material, means for generating a stream of plasma, means for generating a transverse magnetic field, and a macro particle deflector. The transverse magnetic field bends the generated stream of plasma in the direction of a substrate. Macro particles are effectively filtered from the stream of plasma by traveling, unaffected by the transverse magnetic field, along the initial path of the plasma stream to a macro particle deflector. The macro particle deflector has a preformed surface which deflects macro particles away from the substrate.

Filtered cathodic arc deposition apparatus and method

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Method of improving field emission characteristics of diamond thin films

A method and system for manufacturing a field emission cathode having enhanced electron emission properties. The field emission cathode is prepared by providing a field emission substrate, an alkali metal alloy is formed at and below the exposed surface of the substrate, and a surface layer of alkali metal atoms are formed on the exposed surface by Gibbsian diffusion segregation action. If the monolayer, or surface layer, is desorbed, the diffusion action reestablishes the alkali metal surface layer thereby providing a stable alkali metal layer and enhanced electron emission characteristics.

Enhanced field emission from microtip structures

A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

Diamond film growth argon-carbon plasmas

A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

Method for the preparation of nanocrystalline diamond thin films

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

Diamond film growth from fullerene precursors

A time of flight direct recoil and ion scattering spectrometer beam line (10). The beam line (10) includes an ion source (12) which injects ions into pulse deflection regions (14) and (16) separated by a drift space (18). A final optics stage includes an ion lens and deflection plate assembly (22). The ion pulse length and pulse interval are determined by computerized adjustment of the timing between the voltage pulses applied to the pulsed deflection regions (14) and (16).

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Naperville, IL, United States of America

Alan R Krauss