Sarnoff Corporation

Sri International

Alan Michael Braun

Joseph H Abeles

Martin Kwakernaak

Winston Kong Chan

Timothy James Davis

Sterling Eduard McBride

Seth Charles Caliga

Sterling Eduardo McBride

Viktor Borisovitch Khalfin

Peter John Zanzucchi

Hooman Mohseni

William Happer

Ramon Ubaldo Martinelli

Robert Amantea

Steven A Lipp

Ralph Doud Whaley, Jr

John P Riganati

Joey J Michalchuk

Zane Alan Shellenbarger

An assembly includes one or more high temperature vapor cells positioned along an axis of the assembly, a vacuum envelope encasing the one or more high temperature vapor cells, and one or more sets of low thermal conductivity mounting structures coupled to the vacuum envelope. Each set of low thermal conductivity mounting structures is configured to position a corresponding one of the high temperature vapor cells within the vacuum envelope.

Low power atomic sensor

The disclosure describes vacuum cell assemblies that integrate a vacuum envelope with a photonic integrated circuit (PIC). Walls of the vacuum envelope are coupled to the PIC, such as through anodic bonding, so that the PIC forms at least one wall of the vacuum envelope and provides an optically accessible medium and surface for transmitting and distributing light into various cavities of the vacuum envelope through one or more nonplanar waveguides. A surface of the PIC may include a material that is compatible with a material of the walls of the vacuum envelope, such as a silicon-based vacuum envelope bonded to a silicon nitride or amorphous silicon surface of the PIC. Each waveguide may include a bridge structure that forms a planar surface for tightly bonding with the vacuum envelope and preserves properties of the transmitted light between opposing sections of the waveguide.

Integrated vacuum cell assemblies

The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Single ridge N-P-N diode laser

The present invention provides a system and method for achieving a calibration-free primary atomic clock standard operating at the 0-0 transition free-atom frequency, thus creating a primary frequency standard, with attributes that include scalable to chip-scale dimensions and power consumption.

System and method for modulating pressure in an alkali-vapor cell

A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.

Batch-fabricated, RF-interrogated, end transition, chip-scale atomic clock

A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.

High power diode laser based source

A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

Anodically bonded cell, method for making same and systems incorporating same

A low-jitter optical pulse source including: a monolithic waveguide including a first section substantially perpendicular to a first facet and a second section being curved and substantially non-perpendicular to a second facet; and, an optical circulator coupled to the monolithic waveguide and forming a sigma cavity in combination with the monolithic waveguide, wherein the first facet forms a sole reflector for the sigma cavity.

Compact, high-power, low-jitter, semiconductor modelocked laser module

One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling elements. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling elements couple the resonator to the substrate. The resonator coupling elements may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.

Growing community of inventors

Lawrence Township, NJ, United States of America

Alan Michael Braun