Osram Sylvania Inc.

Osram Opto Semiconductors Gmbh

Osram Gmbh

Harvard College

The State University of New York

Ams-Osram International Gmbh

Other

Boston University

Osram Gesellschaft MIT Beschraenkter Haftung

Osram Sylania Inc.

Alan Lenef

Darshan Kundaliya

Adam Scotch

David W Johnston

Federico Capasso

Jörg Erich Sorg

Yi Zheng

Francesco Aieta

Norwin Von Malm

Angela Eberhardt

Joerg Sorg

Madis Raukas

Maxim N Tchoul

Thomas Dreeben

James A Avallon

David Klotzkin

Xin Wen

Steve Byrnes

A Bowman Budinger

David Hamby

Maria J Anc

Helmar Adler

Roland Schulz

Jan Oliver Drumm

Florian Peskoller

Luca Dal Negro

Raymond T Fleming

Jason J Li

Jörg Frischeisen

Sridharan Venk

Jeffery J Serre

Simon Lankes

John F Kelso

Dennis Sprenger

Nathan M Zink

Sergey Kudaev

Matthew Stough

Christopher A Tarry

Yan M Li

Zhengbo Yu

Richard C Laird

Jörg-Erich Sorg

Phillip R Whitt

James Whitehead

Heinz W Sell

Alexander N Kasak

Joachim Wirth-Schön

Ran Zhang

Sean Gorsky

Alan Piquette

Abdullah Gok

Maria Anc

David Johnston

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

Optoelectronic semiconductor device and glasses

The present invention concerns an optoelectronic device, in particular an optical wavelength converter or infrared (IR) emitting or IR photodiode device, comprising an organic matrix, wherein the organic matrix is coated with at least one layer comprising an amorphous fluoropolymer. The invention also pertains to a method for the production of such devices.

Organic anti-reflective coating for visible and IR optical components for emission efficiency

In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

Semiconductor light source with a mirror coating and method

A method for producing a planar light circuit is specified. The method comprises: providing a substrate free of light producing regions, depositing a waveguide layer, applying a photostructurable mask on the waveguide layer, photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions, etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides, removal of the photostructurable mask layer, and singulating into a planar light circuit. Furthermore, a planar light circuit is specified.

Method for producing a planar light circuit and planar light circuit

Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.

Optoelectronic light source and data glasses

Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Aperiodic nano-optical array for angular shaping of incoherent emissions

An optoelectronic light source includes a semiconductor laser configured to produce polarized primary radiation, a converter material configured to absorb at least part of the primary radiation and convert the primary radiation into a secondary radiation of an increased wavelength, a planar multi-layered mirror located between the semiconductor laser and the converter material, the multi-layered mirror configured to transmit the primary radiation and reflect the secondary radiation, and an optical element provided between the semiconductor laser and the multi-layered mirror, wherein the optical element is configured such that the primary radiation coming from the semiconductor laser impinges on the multi-layered mirror at a Brewster angle.

Optoelectronic light source

A multilayer ceramic converter with stratified scattering is disclosed. In an embodiment a ceramic wavelength converter assembly having a layered structure includes a phosphor layer, an upper barrier layer, and a lower barrier layer, wherein the phosphor layer is at least partially disposed between the upper barrier layer and the lower barrier layer.

Multilayer ceramic converter with stratified scattering

An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.

Optoelectronic semiconductor light source and Bragg mirror

A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgFand/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Converter for an optoelectronic component, optoelectronic component, method for forming a converter for an optoelectronic component and material for a reflector of an optoelectronic component

There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

Ceramic wavelength converter having a high reflectivity reflector

A method for producing a laser activated remote phosphor (LARP) sub-assembly, which may comprise: preparing a target composed of a material; activating the target such that the material is released from the target; directing the material released from the target in the direction of a wavelength converter and depositing the material released from the target onto a major surface of the wavelength converter creating a bonding film.

Method of bonding a laser activated remote phosphor assembly, method of manufacture and a laser activated remote phosphor assembly

A reflective laser activated remote phosphor (LARP) package comprising: a phosphor platelet oriented in a first plane defined by an x-y plane; a laser diode (LD) positioned to be offset along the x-axis from the phosphor platelet and above the first plane along a z-axis perpendicular to the x-y plane, the LD comprising: an output facet configured for emitting a laser beam (LB), the LB comprising: a slow axis oriented in a first direction along which the LB diverges at a first angle; and a fast axis oriented in a second direction along which the LB diverges at a second angle greater than the first angle; wherein the LD is oriented such that: the LB is bisected by the phosphor platelet such that the slow axis of the LB lies in an x-z plane and the fast axis of the LB is perpendicular to an x-z plane.

Integrated planar reflective LARP package and method

The present disclosure is directed to light converter assemblies with enhanced heat dissipation. A light converter assembly may comprise a confinement material applied to at least a first substrate and a phosphor material also deposited on the first substrate so as to be surrounded by the confinement material. The first substrate may be hermetically sealed to a second substrate using the confinement material so that the phosphor material is confined between the substrates and protected from atmospheric contamination. The substrates may comprise, for example, sapphire to allow for light beam transmission and heat conductance. Confinement materials that may be employed to seal the first substrate to the second substrate may include, for example, silicon or a metal (e.g., silver, copper, aluminum, etc.) The phosphor material may comprise, for example, at least one quantum dot material.

Light converter assemblies with enhanced heat dissipation

A laser-activated remote phosphor (LARP) target with a first layer having a first index of refraction and a phosphor dispersed within the first layer. A second layer which has a second index of refraction different from the first index of refraction and adjoins the first layer at an interface. The first index of refraction is higher than the second index of refraction such that the interface is configured to at least partially reflect light emitted from the phosphor.

Laser activated remote phosphor target with low index coating on phosphor, method of manufacture and method for re-directing emissions

Growing community of inventors

Belmont, MA, United States of America

Alan Lenef